N Channel MOSFET 60V 4.5A Continuous Current Siliup SP60N30T1 in SOT 23 3L Surface Mount Package
Key Attributes
Model Number:
SP60N30T1
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
590pF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SP60N30T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP60N30T1 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. This device is available in a surface mount SOT-23-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N30
- Package Type: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 30 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 35 | m | ||
| Continuous Drain Current | ID | 4.5 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 60 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 4.5 | A | ||
| Pulse Drain Current | IDM | Tested | 18 | A | ||
| Power Dissipation | PD | (Ta=25) | 2.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 50 | C/W | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.2 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 35 | 45 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 590 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 70 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 64 | - | pF |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=5A | - | 12 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V , VGS=10V , ID=5A | - | 1.9 | - | nC |
| Gate-Drain Charge | Qg | VDS=30V , VGS=10V , ID=5A | - | 2.5 | - | nC |
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=3 , ID=2A | - | 10.5 | - | nS |
| Turn-On Rise Time | tr | VDD=30V VGS=10V , RG=3 , ID=2A | - | 4.5 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V VGS=10V , RG=3 , ID=2A | - | 22 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V VGS=10V , RG=3 , ID=2A | - | 4.3 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | Typ. | ||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP60N30T1 | SOT-23-3L | 3000 | ||||
2504101957_Siliup-SP60N30T1_C41354930.pdf
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