Power Switching N Channel MOSFET Featuring Low RDS On and Fast Switching Siliup SP60N05GNJ with PDFN3X3 8L Package
Key Attributes
Model Number:
SP60N05GNJ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
4.7mΩ@10V;5.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
660pF
Input Capacitance(Ciss):
2.304nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
37.5nC@10V
Mfr. Part #:
SP60N05GNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP60N05GNJ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60N05GNJ
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN3X3-8L
- Channel Type: N-Channel
- Country of Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 4.7 | m | ||
| RDS(on) TYP | RDS(on) | @4.5V | 5.5 | m | ||
| ID | ID | 50 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 50 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 33 | A | |||
| Pulse Drain Current | IDM | Tested | 200 | A | ||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 45 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.78 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 2 | 3 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 4.7 | 6.0 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 5.5 | 7.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 2304 | - | pF |
| Output Capacitance | Coss | - | 660 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 19 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 37.5 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - | 9 | - | nS |
| Rise Time | tr | - | 35 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 32 | - | nS | |
| Fall Time | tf | - | 58 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Reverse Recovery Time | trr | IS= 20 A,di/dt=100 A/sTJ=25 | - | 27 | - | nS |
| Reverse Recovery Charge | Qrr | - | 39 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP60N05GNJ_C22466768.pdf
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