Low RDSon 100V N-Channel MOSFET Siliup SP2N10T2 Suitable for Battery Switches and DC DC Converters
Key Attributes
Model Number:
SP2N10T2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
RDS(on):
210mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
-
Output Capacitance(Coss):
22pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
190pF
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
SP2N10T2
Package:
SOT-23
Product Description
Product Overview
The SP2N10T2 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability and is designed for surface mount applications. Key applications include battery switches and DC/DC converters. The device offers a low Drain-Source On-Resistance (RDS(on)) of 210m at 10V and 230m at 4.5V, with a continuous drain current (ID) of 2A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2N Series
- Channel Type: N-Channel
- Package Type: SOT-23
- Marking Code: 0102
- Country of Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 210 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 230 | m | ||
| Continuous Drain Current | ID | 2 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 2 | A | |||
| Pulse Drain Current | IDM | Tested | 8 | A | ||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 2.1 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =1.4A | - | 210 | 240 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =1.3A | - | 230 | 280 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 385 | - | pF |
| Output Capacitance | Coss | - | 30 | - | ||
| Reverse Transfer Capacitance | Crss | - | 26 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=2A | - | 8.6 | - | nC |
| Gate-Source Charge | Qgs | - | 1.3 | - | ||
| Gate-Drain Charge | Qgd | - | 1.7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=1, ID=1.3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 13 | - | ||
| Turn-Off Fall Time | tf | - | 29 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2N10T2 | SOT-23 | 3000 |
2504101957_Siliup-SP2N10T2_C41354912.pdf
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