Power MOSFET N Channel 100V Siliup SP010N04BGNK Featuring Split Gate Trench Technology for Switching
Key Attributes
Model Number:
SP010N04BGNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V;6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
1.125nF
Input Capacitance(Ciss):
2.97nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP010N04BGNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP010N04BGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low Gate Charge, and low RDS(on). This MOSFET is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. It features 100% Single Pulse avalanche energy testing for enhanced reliability.Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04BGNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 100 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 70 | A | |||
| Pulse Drain Current Tested | IDM | 400 | A | |||
| Single pulsed avalanche energy | EAS | 380 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 150 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 4.5 | 5.7 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 6 | 8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2970 | - | pF |
| Output Capacitance | Coss | - | 1125 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 24 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | ||
| Gate-Drain Charge | Qgd | - | 7.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V , VGS=10V , RG=3 , ID=50A | - | 12.1 | - | nS |
| Rise Time | Tr | - | 17.4 | - | ||
| Turn-Off Delay Time | Td(off) | - | 47 | - | ||
| Fall Time | Tf | - | 32 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse recover time | Trr | IS=50A, di/dt=100A/us, Tj=25 | - | 32 | - | nS |
| Reverse recovery charge | Qrr | - | 146 | - | nC | |
| PDFN5X6-8L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |
| A | 0.900 - 1.000 | 0.035 - 0.039 | |
| A3 | 0.254REF. | 0.010REF. | |
| D | 4.944 - 5.096 | 0.195 - 0.201 | |
| E | 5.974 - 6.126 | 0.235 - 0.241 | |
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | |
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | |
| k | 1.190 - 1.390 | 0.047 - 0.055 | |
| b | 0.350 - 0.450 | 0.014 - 0.018 | |
| e | 1.270TYP. | 0.050TYP. | |
| L | 0.559 - 0.711 | 0.022 - 0.028 | |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | |
| H | 0.574 - 0.726 | 0.023 - 0.029 | |
| 10 - 12 | 10 - 12 | ||
2504101957_Siliup-SP010N04BGNK_C22466791.pdf
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