dual P channel MOSFET Siliup SP30P13DP8 designed for power switching and high frequency circuits
Key Attributes
Model Number:
SP30P13DP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
RDS(on):
13mΩ@10V;20mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
2 P-Channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P13DP8
Package:
SOP-8L
Product Description
Product Overview
The SP30P13DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30P13DP8
- Package: SOP-8L
- Device Code: 30P13D
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -10V | 13 | 18 | m | |
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 20 | 30 | m | |
| Continuous Drain Current | ID | -9 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -9 | A | |||
| Pulsed Drain Current | IDM | -36 | A | |||
| Single Pulse Avalanche Energy | EAS | 11.2 | mJ | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-9A | - | 13 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-7A | - | 20 | 30 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1600 | - | pF |
| Output Capacitance | Coss | - | 350 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 300 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 5.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 8 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | - | 10 | - | nS |
| Rise Time | Tr | - | 60 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 70 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -9 | A | |
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 11 | - | nC | |
| SOP-8L Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30P13DP8_C41355083.pdf
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