PDFN5X6 8L 40V MOSFET with ROHS compliance and halogen free certification Siliup SP4023CNK device

Key Attributes
Model Number: SP4023CNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A;14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V;32mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF;102pF
Number:
-
Output Capacitance(Coss):
51pF;184pF
Input Capacitance(Ciss):
834pF;1.215nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
15.8nC@10V;21nC@10V
Mfr. Part #:
SP4023CNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP4023CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds and a surface mount PDFN5X6-8L package. This device is ROHS Compliant & Halogen-Free and undergoes 100% Single Pulse avalanche energy testing. It is ideal for use in DC-DC converters and motor control applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP4023CNK
  • Package Type: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Rating P-Channel Conditions P-Channel Rating Unit
Drain-Source Voltage VDS VGS=0V 40 VGS=0V -40 V
VGS=0V - VGS=0V - V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current (Tc=25°C) ID 23 -14 A
Pulse Drain Current IDM 92 -56 A
Single pulsed avalanche energy EAS VDD=20V, VGS =10V, L = 0.1mH, Rg=25Ω 18 VDD=-20V, VGS =-10V, L = 0.1mH, Rg=25Ω 29 mJ
Power Dissipation (Tc=25°C) PD 25 W
Thermal Resistance Junction-to-Case RθJC 5 °C/W
Storage Temperature Range TSTG -55 to 150 °C
Operating Junction Temperature Range TJ -55 to 150 °C
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 VGS=0V , ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25°C - VDS=-32V , VGS=0V , TJ=25°C -1 uA
Gate-Source Leakage Current IGSS VGS=±20V , VDS=0V ±100 VGS=±20V , VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.0 VGS=VDS , ID =-250uA -1.0 - -2.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 10A 20 - 25 VGS =-10V, ID =-5A 32 - 38
Static Drain-Source On-Resistance RDS(ON) VGS = 4.5V, ID = 8A 27 - 36 VGS =-4.5V, ID =-3A 39 - 49
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 834 VDS=-15V , VGS=0V , f=1MHz 1215 pF
Output Capacitance Coss 51 184 pF
Reverse Transfer Capacitance Crss 45 102 pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=10A 15.8 VDS=-15V , VGS=-10V , ID=-10A 21 nC
Gate-Source Charge Qgs 3.8 3.5 nC
Gate-Drain Charge Qg 2.9 5.2 nC
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3Ω, ID=10A 4.8 VDD=-15V VGS=-10V , RG=3Ω, ID=-6A 5.1 nS
Rise Time Tr 6.4 15 nS
Turn-Off Delay Time Td(off) 18.8 23 nS
Fall Time Tf 3.4 11 nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25°C - VGS=0V , IS=-1A , TJ=25°C -1.2 V
Maximum Body-Diode Continuous Current IS 23 -14 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25°C 11 IS=-5A, di/dt=-100A/us, Tj=25°C 15 nS
Reverse recovery charge Qrr 6 9 nC
Package Symbol Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.) Dimensions In Inches (Min.) Dimensions In Inches (Max.)
PDFN5X6-8L A 0.900 1.000 0.035 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 1.470 1.870 0.058 0.074
D2 0.470 0.870 0.019 0.034
E1 3.375 3.575 0.133 0.141
D3 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
θ 10° 12° 10° 12°

2504101957_Siliup-SP4023CNK_C22385422.pdf

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