High current capacity 40V N Channel Power MOSFET Siliup SP40N02BGTD for power switching applications

Key Attributes
Model Number: SP40N02BGTD
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
145A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
1.208nF
Input Capacitance(Ciss):
3.485nF
Pd - Power Dissipation:
175W
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
SP40N02BGTD
Package:
TO-263
Product Description

Product Overview

The SP40N02BGTD is a 40V N-Channel Power MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), making it ideal for DC-DC converters, high-frequency switching, and synchronous rectification. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N02BGTD
  • Device Code: 40N02BG
  • Package: TO-263

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on) RDS(on) @10V 2.6 m
RDS(on) RDS(on) @4.5V 3.6 m
Continuous Drain Current ID 145 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (TC=25) 145 A
Pulsed Drain Current IDM 580 A
Single Pulse Avalanche Energy EAS 529 mJ
Total Power Dissipation PD (TC=25) 175 W
Thermal Resistance Junction-Case RJC 0.71 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 --- --- V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 --- --- 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V --- --- 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=30A --- 2.6 3.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A --- 3.6 4.8 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz --- 3485 --- pF
Output Capacitance Coss --- 1208 --- pF
Reverse Transfer Capacitance Crss --- 59 --- pF
Switching Characteristics
Total Gate Charge Qg VDS=20V , VGS=10V , ID=65A --- 57 --- nC
Gate-Source Charge Qgs --- 9.5 ---
Gate-Drain Charge Qg d --- 11 ---
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=65A --- 10 --- ns
Rise Time Tr --- 3 ---
Turn-Off Delay Time Td(off) --- 35 ---
Fall Time Tf --- 4 ---
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=20A , TJ=25 --- --- 1.2 V

Package Information (TO-263)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
0 8 0 8
V 5.600 REF. 0.220 REF.

2410122026_Siliup-SP40N02BGTD_C22385359.pdf

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