Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package
Key Attributes
Model Number:
SP015N06GHTG
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
5.24nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP015N06GHTG
Package:
TO-220F
Product Description
Product Overview
The SP015N06GHTG is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220F package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N06GH
- Package: TO-220F
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 150 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 6.9 | m | ||
| ID | ID | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 120 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 80 | A | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 230 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 6.9 | 8.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5240 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qg | - | 20 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 70A, RG = 6 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 98 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 217 | - | nC | |
Package Information (TO-220F)
| Symbol | Dimensions (mm) |
| A | 4.300 - 4.700 |
| A1 | 1.300 REF. |
| A2 | 2.800 - 3.200 |
| A3 | 2.500 - 2.900 |
| b | 0.500 - 0.750 |
| b1 | 1.100 - 1.350 |
| b2 | 1.500 - 1.750 |
| c | 0.500 - 0.750 |
| D | 9.960 - 10.360 |
| E | 14.800 - 15.200 |
| e | 2.540 TYP. |
| F | 2.700 REF. |
| 3.500 REF. | |
| h | 0.000 - 0.300 |
| h1 | 0.800 REF. |
| h2 | 0.500 REF. |
| L | 28.000 - 28.400 |
| L1 | 1.700 - 1.900 |
| L2 | 0.900 - 1.100 |
2504101957_Siliup-SP015N06GHTG_C22385387.pdf
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