Power Switching MOSFET Siliup SP40P04TH 40V P Channel with Low RDS on and Fast Switching Performance
Product Overview
The SP40P04TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and power switching applications. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P04
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) | @ -10V | 4.8 | 6 | m | ||
| RDS(on) | @ -4.5V | 6.5 | 8.6 | m | ||
| ID | -90 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -90 | A | |||
| Continuous Drain Current (TC=100) | ID | -60 | A | |||
| Pulsed Drain Current | IDM | -360 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 506 | mJ | |||
| Power Dissipation (TC=25) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V , ID= -20A | 4.8 | 6 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V , ID=-20A | 6.5 | 8.6 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 6456 | pF | ||
| Output Capacitance | Coss | 508 | pF | |||
| Reverse Transfer Capacitance | Crss | 441 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-20A | 74 | nC | ||
| Gate-Source Charge | Qgs | 22 | nC | |||
| Gate-Drain Charge | Qgd | 18 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD= -20V, ID= -20A , VGS= -10V , RG=2.4 | 10 | nS | ||
| Rise Time | Tr | 15 | nS | |||
| Turn-Off Delay Time | Td(off) | 93 | nS | |||
| Fall Time | Tf | 20 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -90 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | 20 | nS | ||
| Reverse Recovery Charge | Qrr | 11 | nC | |||
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP40P04TH_C41355036.pdf
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