Fast Switching 650V MOSFET Siliup SP30HF65TQ with Low Gate Charge and Continuous Drain Current
Key Attributes
Model Number:
SP30HF65TQ
Product Custom Attributes
Mfr. Part #:
SP30HF65TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP30HF65TQ is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard-switched and high-frequency circuits, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30HF65TQ
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 85 | 100 | m | |
| Continuous Drain Current | ID | (Tc=25) | 30 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 30 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 20 | A | ||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 362 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 128 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS =520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 85 | 100 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=100kHz | - | 2618 | - | pF |
| Output Capacitance | Coss | - | 136 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 4.1 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=40A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qgd | - | 21 | - | nC | |
| Turn-On Delay Time | Td(on) | VGS = 10V, VDS = 400V, ID=40A , RG = 2 | - | 35 | - | nS |
| Rise Time | Tr | - | 152 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 63 | - | nS | |
| Fall Time | Tf | - | 48 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 30 | A | |
| Reverse Recovery Time | trr | IS=40A,di/dt=100A/us, Tj=25 | - | 148 | - | nS |
| Reverse Recovery Charge | Qrr | - | 1.2 | - | uC | |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2506271720_Siliup-SP30HF65TQ_C49257232.pdf
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