N Channel 200V Power MOSFET Featuring Low Gate Charge Siliup SP020N08GHTO Suitable for DC DC Converters
Key Attributes
Model Number:
SP020N08GHTO
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
150A
RDS(on):
9.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Pd - Power Dissipation:
340W
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
5.3nF
Mfr. Part #:
SP020N08GHTO
Package:
TOLL
Product Description
Product Overview
The SP020N08GHTO is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for high-speed power switching applications, DC-DC converters, and power management systems. This MOSFET offers low reverse transfer capacitances and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N08GHTO
- Channel Type: N-Channel
- Package: TOLL
- Origin: China (implied by manufacturer website)
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | - | 200 | V | ||
| RDS(on)TYP | RDS(on) | @10V | 8 | m | ||
| ID | ID | - | 150 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 200 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 150 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 100 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 600 | A | ||
| Single Pulse Avalanche Energy1 | EAS | (Ta=25, unless otherwise noted) | 1156 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 340 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.37 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 to 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | V | ||
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | 1 | A | |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | 0.1 | A | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 4.0 | V | |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8 | 9.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 5300 | pF | |
| Output Capacitance | Coss | - | - | 410 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 27 | pF | |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 78 | nC | |
| Gate-Source Charge | Qgs | - | - | 28 | - | |
| Gate-Drain Charge | Qgd | - | - | 17 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 , RG = 6.0 | - | 23 | nS | |
| Rise Time | tr | - | - | 48 | - | |
| Turn-Off Delay Time | td(off) | - | - | 63 | - | |
| Fall Time | tf | - | - | 19 | - | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | - | 150 | A | |
| Body Diode Reverse Recovery Time | trr | IS = 50A, dIF/dt = 100A/us | - | 128 | nS | |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 643 | nC | |
| TOLL Package Dimensions (mm) | ||||||
| Symbol | Min. | Nom. | Max. | Unit | ||
| A | 2.20 | 2.30 | 2.40 | - | ||
| b | 0.65 | 0.75 | 0.85 | - | ||
| C | 0.508 | - | - | - | ||
| D | 10.25 | 10.40 | 10.55 | - | ||
| D1 | 2.85 | 3.00 | 3.15 | - | ||
| E | 9.75 | 9.90 | 10.05 | - | ||
| E1 | 9.65 | 9.80 | 9.95 | - | ||
| E2 | 8.95 | 9.10 | 9.25 | - | ||
| E3 | 7.25 | 7.40 | 7.55 | - | ||
| e | - | 1.20 | - | BSC | ||
| F | 1.05 | 1.20 | 1.35 | - | ||
| H | 11.55 | 11.70 | 11.85 | - | ||
| H1 | 6.03 | 6.18 | 6.33 | - | ||
| H2 | 6.85 | 7.00 | 7.15 | - | ||
| H3 | - | 3.00 | - | BSC | ||
| L | 1.55 | 1.70 | 1.85 | - | ||
| L1 | 0.55 | 0.7 | 0.85 | - | ||
| L2 | 0.45 | 0.6 | 0.75 | - | ||
| M | - | 0.08 | - | REF. | ||
| 8 | 10 | 12 | - | |||
| K | 4.25 | 4.40 | 4.55 | - | ||
Note: 1. The test condition for EAS is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP020N08GHTO | TOLL | 2000 |
2504101957_Siliup-SP020N08GHTO_C45351235.pdf
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