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quality 200V N Channel Power MOSFET Siliup SP020N09GHTO Featuring Fast Switching and Low Rdson for DC DC Converter factory
quality 200V N Channel Power MOSFET Siliup SP020N09GHTO Featuring Fast Switching and Low Rdson for DC DC Converter factory

200V N Channel Power MOSFET Siliup SP020N09GHTO Featuring Fast Switching and Low Rdson for DC DC Converter

Key Attributes
Model Number: SP020N09GHTO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF@100V
Number:
1 N-channel
Output Capacitance(Coss):
342pF
Input Capacitance(Ciss):
6.94nF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP020N09GHTO
Package:
TOLL
Product Description

Product Overview

The SP020N09GHTO is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for high-speed power switching, DC-DC converters, and power management applications. Key advantages include low reverse transfer capacitances and 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP020N09GHTO
  • Package Type: TOLL

Technical Specifications

Parameter Symbol Test Condition Rating Unit
Product Summary
V(BR)DSS 200 V
RDS(on)TYP @10V 8.3 m
ID 140 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID (Tc=25) 140 A
Continuous Drain Current (Tc=100) ID (Tc=100) 93 A
Pulsed Drain Current IDM 560 A
Single Pulse Avalanche Energy EAS 1521 mJ
Power Dissipation (Tc=25) PD (Tc=25) 320 W
Thermal Resistance Junction-to-Case RJC 0.39 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 200 - 225 V
Drain Cut-Off Current IDSS VDS = 160V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 8.3 9.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS =100V, VGS = 0V, f = 1.0MHz - 6940 - pF
Output Capacitance Coss - 342 - pF
Reverse Transfer Capacitance Crss - 36 -
Total Gate Charge Qg VDS=100V , VGS=10V , ID=20A - 48 - nC
Gate-Source Charge Qgs - 18 -
Gate-Drain Charge Qg d - 11 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS =100V, RL=3.5 , RG = 6.0 - 18 - nS
Rise Time tr - 28 -
Turn-Off Delay Time td(off) - 39 -
Fall Time tf - 19 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 185 A
Body Diode Reverse Recovery Time Trr IS = 50A, dIF/dt = 100A/us 128 nS
Body Diode Reverse Recovery Charge Qrr 643 nC
Package Outline Dimensions (TOLL)
Symbol Dimensions In Millimeters Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2410311049_Siliup-SP020N09GHTO_C42372362.pdf

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