Siliup SP010N03BGHTQ 100V N Channel MOSFET Featuring Low Rdson and Low Gate Charge for Power Conversion
Key Attributes
Model Number:
SP010N03BGHTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.396nF
Output Capacitance(Coss):
1.361nF
Pd - Power Dissipation:
205W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
SP010N03BGHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N03BGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. The device offers low reverse transfer capacitances and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N03BGHTQ
- Channel Type: N-Channel
- Package: TO-220-3L (Pinout: 1:G 2:D 3:S)
- Marking: 010N03BGH (Product code), *: Week code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 100 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.3 | m | ||
| ID | ID | 170 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 170 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 115 | A | ||
| Pulsed Drain Current | IDM | 680 | A | |||
| Single Pulse Avalanche Energy | EAS | 3136 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 205 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.61 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 2.7 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.3 | 4.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 4398 | - | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | - | 1361 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | - | 8.5 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 90 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=125A | - | 13 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=125A | - | 19 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 20 | - | nS |
| Rise Time | tr | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 70 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 50 | - | nS |
| Fall Time | tf | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 16 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 170 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 86 | - | nS |
| Reverse Recovery Charge | Qrr | IS=50A, di/dt=100A/us, TJ=25 | - | 206 | - | nC |
| Package Information | ||||||
| Package Type | TO-220-3L | |||||
| Dimensions (Millimeters) | Min. | Max. | ||||
| A | 4.400 | 4.600 | ||||
| A1 | 2.250 | 2.550 | ||||
| b | 0.710 | 0.910 | ||||
| b1 | 1.170 | 1.370 | ||||
| c | 0.330 | 0.650 | ||||
| c1 | 1.200 | 1.400 | ||||
| D | 9.910 | 10.250 | ||||
| E | 8.950 | 9.750 | ||||
| E1 | 12.650 | 13.050 | ||||
| e | 2.540 (TYP.) | |||||
| e1 | 4.980 | 5.180 | ||||
| F | 2.650 | 2.950 | ||||
| H | 7.900 | 8.100 | ||||
| h | 0.000 | 0.300 | ||||
| L | 12.900 | 13.400 | ||||
| L1 | 2.850 | 3.250 | ||||
| V | 6.900 (REF.) | |||||
| 3.400 | 3.800 | |||||
2504101957_Siliup-SP010N03BGHTQ_C22385394.pdf
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