85V N Channel MOSFET Siliup SP85N02AGHTF with Split Gate Trench Technology and Low RDS On Resistance
Key Attributes
Model Number:
SP85N02AGHTF
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
280A
RDS(on):
1.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 N-channel
Output Capacitance(Coss):
4.7nF
Pd - Power Dissipation:
270W
Input Capacitance(Ciss):
9.1nF
Gate Charge(Qg):
143nC@10V
Mfr. Part #:
SP85N02AGHTF
Package:
TO-247
Product Description
Product Overview
The SP85N02AGHTF is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N02AGHTF
- Technology: Advanced Split Gate Trench Technology
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 85 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 1.7 | m | ||
| Continuous Drain Current | ID | 280 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 85 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 280 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 190 | A | ||
| Pulsed Drain Current | IDM | 1120 | A | |||
| Single Pulse Avalanche Energy | EAS | 1650 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 270 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 2.8 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 1.7 | 2.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - | 9100 | - | pF |
| Output Capacitance | Coss | - | 4700 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 190 | - | pF | |
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=165A | - | 143 | - | nC |
| Gate-Source Charge | Qgs | - | 51 | - | nC | |
| Gate-Drain Charge | Qgd | - | 25 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=165A , RG = 1.6 | - | 27 | - | nS |
| Rise Time | tr | - | 75 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 86 | - | nS | |
| Fall Time | tf | - | 35 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 280 | A | |
| Reverse Recovery Time | Trr | IS=155A, di/dt=100A/us, TJ=25 | - | 115 | - | nS |
| Reverse Recovery Charge | Qrr | - | 320 | - | nC | |
Note: Single Pulse Avalanche Energy test condition is VDD=45V, VGS=10V, L=0.5mH, RG=25.
TO-247 Package Dimensions (Millimeters/Inches):
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Dimensions (in) Min. | Dimensions (in) Max. |
|---|---|---|---|---|
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2504101957_Siliup-SP85N02AGHTF_C22466788.pdf
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