Low RDS on 40V N Channel MOSFET Siliup SP40N06GNK with Fast Switching and Avalanche Energy Testing

Key Attributes
Model Number: SP40N06GNK
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
623pF
Gate Charge(Qg):
21nC
Mfr. Part #:
SP40N06GNK
Package:
PDFN5X6-8L
Product Description

Product Overview

The SP40N06GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40N06GNK
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
Product Summary
V(BR)DSS 40 V
RDS(on) @10V 6 7.5 m
RDS(on) @4.5V 8.5 12 m
ID 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25unless otherwise noted) 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25 40 A
Continuous Drain Current ID (Tc=100) 27 A
Pulsed Drain Current IDM 160 A
Single Pulse Avalanche Energy EAS 81 mJ
Power Dissipation PD (Tc=25 34 W
Thermal Resistance Junction-to-Case RJC 3.7 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain Cut-Off Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A - 6.0 7.5 m
Drain-Source ON Resistance RDS(ON) VGS=4.5V , ID=10A - 8.5 12 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 623 - pF
Output Capacitance Coss - 311 - pF
Reverse Transfer Capacitance Crss - 21 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 21 - nC
Gate-Source Charge Qgs - 4 -
Gate-Drain Charge Qgd - 5 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=20V, VGS=10V, RG=1.6, ID=85A - 7 - nS
Rise Time tr - 2.5 -
Turn-Off Delay Time td(off) - 21 -
Fall Time tf - 3.5 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 40 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 28 - nS
Reverse Recovery Charge Qrr - 16 - nC
Package Information (PDFN5X6-8L)
Dimension Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2410311050_Siliup-SP40N06GNK_C42372369.pdf
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