power management with Siliup SP60P30NJ 60V P Channel MOSFET featuring low on resistance and fast switching

Key Attributes
Model Number: SP60P30NJ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
30mΩ@10V;38mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 P-Channel
Output Capacitance(Coss):
154pF
Input Capacitance(Ciss):
2.18nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
SP60P30NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP60P30NJ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and low on-resistance, making it suitable for applications such as DC-DC converters and power management systems. This device is tested for 100% single pulse avalanche energy, ensuring reliability in demanding conditions.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60P30NJ
  • Technology: P-Channel MOSFET
  • Package: PDFN3X3-8L
  • Origin: China (implied by company name and website)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage Drain-Source V(BR)DSS -60 V
On-Resistance (Typical) RDS(on)TYP @ -10V 30 m
On-Resistance (Typical) RDS(on)TYP @ -4.5V 38 m
Continuous Drain Current ID -20 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25,unless otherwise noted) -60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Tc=25C) -20 A
Continuous Drain Current ID (Tc=100C) -13 A
Pulse Drain Current IDM Tested -80 A
Single Pulse Avalanche Energy EAS 121 mJ
Power Dissipation PD (Tc=25C) 40 W
Thermal Resistance Junction-to-Case RJC 3.1 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -60 V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-5A 30 40 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-4A 38 50 m
Input Capacitance Ciss VDS=-30V , VGS=0V , f=1MHz 2180 pF
Output Capacitance Coss 154 pF
Reverse Transfer Capacitance Crss 116 pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-6A 52 nC
Gate-Source Charge Qgs 8 nC
Gate-Drain Charge Qgd 10 nC
Turn-On Delay Time Td(on) VDD=-30V,VGS=-10V,RG=3, ID=-6A 12 nS
Rise Time Tr 6 nS
Turn-Off Delay Time Td(off) 53 nS
Fall Time Tf 13 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -20 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 27 nS
Reverse recovery charge Qrr 58 nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 - 0.05 0 - 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 - 0.100 0 - 0.004
L3 0 - 0.100 0 - 0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP60P30NJ_C41355214.pdf

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