power management with Siliup SP60P30NJ 60V P Channel MOSFET featuring low on resistance and fast switching
Product Overview
The SP60P30NJ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and low on-resistance, making it suitable for applications such as DC-DC converters and power management systems. This device is tested for 100% single pulse avalanche energy, ensuring reliability in demanding conditions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P30NJ
- Technology: P-Channel MOSFET
- Package: PDFN3X3-8L
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage Drain-Source | V(BR)DSS | -60 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @ -10V | 30 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @ -4.5V | 38 | m | ||
| Continuous Drain Current | ID | -20 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | -60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | -20 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -13 | A | ||
| Pulse Drain Current | IDM | Tested | -80 | A | ||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 40 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 30 | 40 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 38 | 50 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 2180 | pF | ||
| Output Capacitance | Coss | 154 | pF | |||
| Reverse Transfer Capacitance | Crss | 116 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 52 | nC | ||
| Gate-Source Charge | Qgs | 8 | nC | |||
| Gate-Drain Charge | Qgd | 10 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-30V,VGS=-10V,RG=3, ID=-6A | 12 | nS | ||
| Rise Time | Tr | 6 | nS | |||
| Turn-Off Delay Time | Td(off) | 53 | nS | |||
| Fall Time | Tf | 13 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -20 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 27 | nS | ||
| Reverse recovery charge | Qrr | 58 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 - 0.05 | 0 - 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 - 0.100 | 0 - 0.004 | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP60P30NJ_C41355214.pdf
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