N Channel Power MOSFET Siliup SP40N01GHTO Designed for High Frequency Switching and Power Control
Key Attributes
Model Number:
SP40N01GHTO
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
69pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.75nF
Output Capacitance(Coss):
1.95nF
Pd - Power Dissipation:
293W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
SP40N01GHTO
Package:
TOLL
Product Description
Product Overview
The SP40N01GHTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | RDS(on) | @10V | 1 | 1.3 | m | |
| Continuous Drain Current | ID | 230 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 230 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 153 | A | ||
| Pulsed Drain Current | IDM | 920 | A | |||
| Single Pulse Avalanche Energy | EAS | 1089 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 293 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.43 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 49 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1 | 1.3 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5750 | - | pF |
| Output Capacitance | Coss | - | 1950 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 69 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 32 | - | nC | |
| Gate-Drain Charge | Qgd | - | 12.5 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 8.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 230 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=200A/us, TJ=25 | - | 70 | - | nS |
| Reverse Recovery Charge | Qrr | - | 96 | - | nC | |
| Package Information (TOLL) | ||||||
| Dimensions | Symbol | Millimeters | Min. | Nom. | Max. | |
| A | A | 2.20 | 2.30 | 2.40 | ||
| b | b | 0.65 | 0.75 | 0.85 | ||
| C | C | 0.508 | REF | |||
| D | D | 10.25 | 10.40 | 10.55 | ||
| D1 | D1 | 2.85 | 3.00 | 3.15 | ||
| E | E | 9.75 | 9.90 | 10.05 | ||
| E1 | E1 | 9.65 | 9.80 | 9.95 | ||
| E2 | E2 | 8.95 | 9.10 | 9.25 | ||
| E3 | E3 | 7.25 | 7.40 | 7.55 | ||
| e | e | BSC | 1.20 | |||
| F | F | 1.05 | 1.20 | 1.35 | ||
| H | H | 11.55 | 11.70 | 11.85 | ||
| H1 | H1 | 6.03 | 6.18 | 6.33 | ||
| H2 | H2 | 6.85 | 7.00 | 7.15 | ||
| H3 | H3 | BSC | 3.00 | |||
| L | L | 1.55 | 1.70 | 1.85 | ||
| L1 | L1 | 0.55 | 0.7 | 0.85 | ||
| L2 | L2 | 0.45 | 0.6 | 0.75 | ||
| M | M | REF. | 0.08 | |||
| 8 | 10 | 12 | ||||
| K | K | 4.25 | 4.40 | 4.55 | ||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N01GHTO | TOLL | 2000 |
2504101957_Siliup-SP40N01GHTO_C22385348.pdf
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