40 Volt N Channel MOSFET Siliup SP40N08P8 with Low Gate Charge and Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
SP40N08P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12A
RDS(on):
8mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
1.785nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SP40N08P8
Package:
SOP-8L
Product Description
Product Overview
The SP40N08P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. It undergoes 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N08
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 8 | m | |||
| RDS(on)TYP | @4.5V | 11 | m | |||
| ID | 12 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 12 | A | |||
| Pulsed Drain Current | IDM | 48 | A | |||
| Single Pulsed Avalanche Energy | EAS | 56 | mJ | |||
| Power Dissipation | PD | 2 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A | - | 8 | 12 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=8A | - | 11 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 1785 | - | pF |
| Output Capacitance | Coss | - | 210 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 158 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=10A | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=3, ID=10A | - | 6 | - | nS |
| Rise Time | Tr | - | 16 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 15 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP40N08P8_C41355048.pdf
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