Siliup SP6026CTM Complementary MOSFET 60V Drain Source Voltage Lead Free Device for Power Management
Key Attributes
Model Number:
SP6026CTM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A;18A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V;1.5V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF;58pF
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
53pF;77pF
Input Capacitance(Ciss):
1.165nF;1.09nF
Gate Charge(Qg):
20nC@10V;23nC@10V
Mfr. Part #:
SP6026CTM
Package:
TO-252-4L
Product Description
Product Overview
The SP6026CTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. This lead-free product is available in a surface mount TO-252-4L package and has undergone 100% Single Pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: TO-252-4L
- Material: Lead-free
- Device Code: 6026C
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel Typ. | P-Channel Typ. | Units |
|---|---|---|---|---|---|
| Product Summary | |||||
| Drain-Source Voltage | V(BR)DSS | 60 | -60 | V | |
| RDS(on) | @10V | 25 | m | ||
| RDS(on) | @4.5V | 32 | m | ||
| ID | 20 | A | |||
| RDS(on) | @-10V | 57 | m | ||
| RDS(on) | @-4.5V | 70 | m | ||
| ID | -18 | A | |||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDS | (Ta=25) | 60 | -60 | V |
| Gate-Source Voltage | VGS | (Ta=25) | 20 | 20 | V |
| Continuous Drain Current | ID | (TC=25) | 20 | -18 | A |
| Continuous Drain Current | ID | (TC=100) | 13 | -12 | A |
| Pulsed Drain Current | IDM | 80 | -72 | A | |
| Single Pulse Avalanche Energy | EAS | 29 | 48 | mJ | |
| Power Dissipation | PD | (TC=25) | 40 | W | |
| Thermal Resistance Junction-to-Case | RJC | 3.1 | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| N-Channel Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - 35 | - | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=8A | - 46 | - | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | 1165 | - | pF |
| Output Capacitance | Coss | 53 | - | pF | |
| Reverse Transfer Capacitance | Crss | 46 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | 20 | - | nC |
| Gate-Source Charge | Qgs | 4 | - | nC | |
| Gate-Drain Charge | Qgd | 5 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | 7.5 | - | nS |
| Rise Time | Tr | 20 | - | nS | |
| Turn-Off Delay Time | Td(off) | 16 | - | nS | |
| Fall Time | Tf | 25 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 20 | - | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 35 | - | nS |
| Reverse Recovery Charge | Qrr | 53 | - | nC | |
| P-Channel Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | - | -60 | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | - | -1.0 - -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-2A | - | - 71 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-1A | - | - 93 | m |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 1090 | pF |
| Output Capacitance | Coss | - | 77 | pF | |
| Reverse Transfer Capacitance | Crss | - | 58 | pF | |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 23 | nC |
| Gate-Source Charge | Qgs | - | 4.2 | nC | |
| Gate-Drain Charge | Qg | - | 4.8 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=3,ID=-10A | - | 9.8 | nS |
| Rise Time | Tr | - | 6.1 | nS | |
| Turn-Off Delay Time | Td(off) | - | 44 | nS | |
| Fall Time | Tf | - | 12.7 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | -18 | A | |
| Reverse Recovery Time | Trr | IS=-8A, di/dt=100A/us, TJ=25 | - | 25 | nS |
| Reverse Recovery Charge | Qrr | - | 31 | nC | |
| Package Information (TO-252-4L) | |||||
| Symbol | Dimensions In Millimeters | Min. | Max. | ||
| A | 2.20 | 2.40 | |||
| A1 | 0 | 0.15 | |||
| b | 0.40 | 0.60 | |||
| b2 | 0.50 | 0.80 | |||
| b3 | 5.20 | 5.50 | |||
| c2 | 0.45 | 0.55 | |||
| D | 5.40 | 5.80 | |||
| D1 | 4.57 | - | |||
| E | 6.40 | 6.80 | |||
| E1 | 3.81 | - | |||
| e | REF. | 1.27 | |||
| F | 0.40 | 0.60 | |||
| H | 9.40 | 10.20 | |||
| L | 1.40 | 1.77 | |||
| L1 | 2.40 | 3.00 | |||
| L4 | 0.80 | 1.20 | |||
2506271720_Siliup-SP6026CTM_C49257246.pdf
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