40V N-Channel MOSFET Siliup SP40N05GNK Featuring Split Gate Trench Technology and Low Rds on for Power Management
Product Overview
The SP40N05GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge and Rds(on), and utilizes advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. The device is offered in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N05GNK
- Technology: Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 5 | m | |||
| RDS(on)TYP | @4.5V | 8 | m | |||
| ID | 55 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 55 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 37 | A | |||
| Pulse Drain Current Tested | IDM | 220 | A | |||
| Single pulsed avalanche energy1 | EAS | 81 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 45 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.77 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 5 | 6.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 8 | 10.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1048 | - | pF |
| Output Capacitance | Coss | - | 187 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 178 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 28 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=10V , RG=3, ID=30A | - | 6 | - | nS |
| Rise Time | Tr | - | 2.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 22 | - | ||
| Fall Time | Tf | - | 3.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 55 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse recovery charge | Qrr | - | 14 | - | nC | |
Note: 1. The EAS Test condition is VDD=20V,VGS =10V,L = 0.5mH, Rg=25
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
2504101957_Siliup-SP40N05GNK_C22466764.pdf
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