40V N-Channel MOSFET Siliup SP40N05GNK Featuring Split Gate Trench Technology and Low Rds on for Power Management

Key Attributes
Model Number: SP40N05GNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
55A
RDS(on):
5mΩ@10V;8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
178pF
Number:
1 N-channel
Output Capacitance(Coss):
187pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.048nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
SP40N05GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N05GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge and Rds(on), and utilizes advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. The device is offered in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP40N05GNK
  • Technology: Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 40 V
RDS(on)TYP @10V 5 m
RDS(on)TYP @4.5V 8 m
ID 55 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 55 A
Continuous Drain Current (Tc=100C) ID 37 A
Pulse Drain Current Tested IDM 220 A
Single pulsed avalanche energy1 EAS 81 mJ
Power Dissipation (Tc=25C) PD 45 W
Thermal Resistance Junction-to-Case RJC 2.77 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V, VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 5 6.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=10A - 8 10.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1048 - pF
Output Capacitance Coss - 187 - pF
Reverse Transfer Capacitance Crss - 178 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 28 - nC
Gate-Source Charge Qgs - 4 - nC
Gate-Drain Charge Qgd - 6 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20 VGS=10V , RG=3, ID=30A - 6 - nS
Rise Time Tr - 2.5 -
Turn-Off Delay Time Td(off) - 22 -
Fall Time Tf - 3.5 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 55 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 12 - nS
Reverse recovery charge Qrr - 14 - nC

Note: 1. The EAS Test condition is VDD=20V,VGS =10V,L = 0.5mH, Rg=25

Package Information (PDFN5X6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP40N05GNK_C22466764.pdf

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