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quality Low Resistance P Channel MOSFET Siliup SP2006KT7J with High ESD Protection and Surface Mount Package factory
quality Low Resistance P Channel MOSFET Siliup SP2006KT7J with High ESD Protection and Surface Mount Package factory

Low Resistance P Channel MOSFET Siliup SP2006KT7J with High ESD Protection and Surface Mount Package

Key Attributes
Model Number: SP2006KT7J
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
800mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2006KT7J
Package:
SOT-723
Product Description

Product Overview

The SP2006KT7J is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is ESD protected with an HBM rating of 2KV.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2006KT7J
  • Channel Type: P-Channel
  • Package: SOT-723
  • ESD Protection: HBM 2KV

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Breakdown Voltage V(BR)DSS -20 V
Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -0.5A 0.65 0.8
Drain-Source On-Resistance RDS(on) VGS = -2.5V, ID = -0.2A 0.90 1.1
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -20 V
Gate-Source Voltage VGS (Ta=25) 10 V
Continuous Drain Current ID (Ta=25) -0.66 A
Pulsed Drain Current IDM (Ta=25) -2.6 A
Power Dissipation PD (Ta=25) 0.15 W
Thermal Resistance Junction to Ambient RJA (Ta=25) 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 A
Gate-body leakage current IGSS VGS = 10VVDS =0V 10 A
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.35 -0.65 -1 V
Drain-source on-resistance RDS(on) VGS = -4.5V, ID = -0.5A 0.65 0.8
Drain-source on-resistance RDS(on) VGS = -2.5V, ID = -0.2A 0.90 1.1
Drain-source on-resistance RDS(on) VGS = -1.8V, ID = -0.1A 1.2
Input Capacitance Ciss VDS =-16V,VGS =0V,f =1MHz 113 pF
Output Capacitance Coss VDS =-16V,VGS =0V,f =1MHz 15 pF
Reverse Transfer Capacitance Crss VDS =-16V,VGS =0V,f =1MHz 9 pF
Turn-on delay time td(on) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 9 ns
Turn-on rise time tr VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 5.7 ns
Turn-off delay time td(off) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 32.6 ns
Turn-off fall time tf VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 20.3 ns
Diode Forward voltage VSD VGS =0V, IS=-0.5 A -1.2 V
Package Information (SOT-723)
Dimension Symbol Millimeters (Min.) Millimeters (Max.)
A A 0.430 0.500
A1 A1 0.000 0.050
b b 0.170 0.270
b1 b1 0.270 0.370
c c 0.080 0.150
D D 1.150 1.250
E E 1.150 1.250
E1 E1 0.750 0.850
e e 0.800 (TYP.)
7 (REF.)

2411212332_Siliup-SP2006KT7J_C41355144.pdf

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