low rds on p channel mosfet Siliup SP30P03TH 30 volt device ideal for load switching and power management

Key Attributes
Model Number: SP30P03TH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
3.4mΩ@10V;4.8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 P-Channel
Output Capacitance(Coss):
859pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
SP30P03TH
Package:
TO-252
Product Description

Product Overview

The SP30P03TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 30P03
  • Package: TO-252
  • Material: Silicon (implied by "Siliup Semiconductor")

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) RDS(on) @-10V 3.4 m
RDS(on) RDS(on) @-4.5V 4.8 m
Continuous Drain Current ID -100 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -30 V
Gate-Source Voltage VGS (Ta=25) 12 V
Continuous Drain Current ID (TC=25) -100 A
Continuous Drain Current ID (TC=100) -67 A
Pulsed Drain Current IDM -400 A
Single Pulse Avalanche Energy EAS 676 mJ
Power Dissipation PD (TC=25) 65 W
Thermal Resistance Junction-to-Case RJC 1.9 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-30A 3.4 4.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-20A 4.8 6.4 m
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 5700 pF
Output Capacitance Coss 859 pF
Reverse Transfer Capacitance Crss 650 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-20A 120 nC
Gate-Source Charge Qgs 23 nC
Gate-Drain Charge Qg 17 nC
Turn-On Delay Time Td(on) VDD=-15V VGS=-10V , RG=3, ID=-20A 27 nS
Rise Time Tr 83 nS
Turn-Off Delay Time Td(off) 76 nS
Fall Time Tf 65 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS -100 A
Reverse Recovery Time Trr IS=-20A, di/dt=100A/us, Tj=25 30 nS
Reverse Recovery Charge Qrr 18 nC
TO-252 Package Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 2.200 - 2.400 0.087 - 0.094
A1 0.000 - 0.127 0.000 - 0.005
b 0.660 - 0.860 0.026 - 0.034
c 0.460 - 0.580 0.018 - 0.023
D 6.500 - 6.700 0.256 - 0.264
D1 5.100 - 5.460 0.201 - 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 - 6.200 0.236 - 0.244
e 2.186 - 2.386 0.086 - 0.094
L 9.800 - 10.400 0.386 - 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 - 1.700 0.055 - 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 - 1.000 0.024 - 0.039
1.100 - 1.300 0.043 - 0.051
0 - 8 0 - 8
h 0.000 - 0.300 0.000 - 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP30P03TH_C41355008.pdf

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