20V N Channel MOSFET Siliup SP4153KT5 with Low On Resistance and 2KV ESD Protection in SOT523 Package
Key Attributes
Model Number:
SP4153KT5
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
-
Output Capacitance(Coss):
19pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
35pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP4153KT5
Package:
SOT-523
Product Description
Product Overview
The SP4153KT5 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-523 package, with ESD protection up to 2KV. This MOSFET is designed for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-523
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 250 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | 350 | m | ||
| Continuous Drain Current | ID | 0.75 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 20 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 10 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 0.75 | A | ||
| Pulse Drain Current | IDM | (Tested) | 3 | A | ||
| Power Dissipation | PD | (Ta=25) | 150 | mW | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 833 | C/W | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 1 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=200mA | - | 350 | 450 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | VDS=10V , VGS=0V , f=1MHz | - | 19 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V , VGS=0V , f=1MHz | - | 9 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V , VGS=4.5V , ID=500mA | - | 0.3 | - | |
| Gate-Drain Charge | Qg d | VDS=10V , VGS=4.5V , ID=500mA | - | 0.16 | - | |
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 19 | - | |
| Turn-Off Delay Time | td(off) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 10 | - | |
| Turn-Off Fall Time | tf | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 21 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions (mm) | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 (TYP) | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 (REF) | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP4153KT5_C41354899.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
