Power Switching MOSFET Siliup SP30N04AP8 30 Volt N Channel Device with Low RDS on and Fast Switching

Key Attributes
Model Number: SP30N04AP8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
290pF
Number:
-
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SP30N04AP8
Package:
SOP-8L
Product Description

Product Overview

The SP30N04AP8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. This device has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 30N04A
  • Package: SOP-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on) @10V 3.8 m
RDS(on)TYP RDS(on) @4.5V 5.8 m
ID ID 15 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) 30 V
Gate-Source Voltage VGS (Ta=25,unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25,unless otherwise noted) 15 A
Pulsed Drain Current IDM (Ta=25,unless otherwise noted) 60 A
Single Pulse Avalanche Energy EAS (Ta=25,unless otherwise noted) 64 mJ
Power Dissipation PD (Ta=25,unless otherwise noted) 3 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25,unless otherwise noted) 41.7 /W
Storage Temperature Range TSTG (Ta=25,unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25,unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=12A - 3.8 5.8 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 5.8 8.8 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 3068 - pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz - 369 - pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz - 289 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=10A - 44 - nC
Gate-Source Charge Qgs VDS=15V , VGS=10V , ID=10A - 7 - nC
Gate-Drain Charge Qg d VDS=15V , VGS=10V , ID=10A - 8 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=3, ID=10A - 10 - nS
Rise Time Tr VDD=15V VGS=10V , RG=3, ID=10A - 29 - nS
Turn-Off Delay Time Td(off) VDD=15V VGS=10V , RG=3, ID=10A - 46 - nS
Fall Time Tf VDD=15V VGS=10V , RG=3, ID=10A - 17 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 15 A
Reverse Recovery Time Trr IS=10A, di/dt=100A/us, Tj=25 - 12 - nS
Reverse Recovery Charge Qrr IS=10A, di/dt=100A/us, Tj=25 - 2.6 - nC
Package Information (SOP-8L)
Symbol Dimensions In Millimeters Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e (REF.) 1.27
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
(0) 8

2504101957_Siliup-SP30N04AP8_C41354862.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.