Low Gate Charge 120V N Channel Power MOSFET Siliup SP012N03BGHTO Suitable for High Speed Power Switching
Key Attributes
Model Number:
SP012N03BGHTO
Product Custom Attributes
Drain To Source Voltage:
130V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
835pF
Input Capacitance(Ciss):
5.64nF
Pd - Power Dissipation:
296W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
SP012N03BGHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP012N03BGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for high-speed power switching, DC-DC converters, and power management applications. The device is tested for 100% single pulse avalanche energy and comes in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N03BGH
- Package: TOLL
- Channel Type: N-Channel
- Voltage Rating: 120V
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 120 | V | |||
| RDS(on) | RDS(on) | @10V | 3.2 | m | ||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 120 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 220 | A | |||
| Continuous Drain Current (Tc=100) | ID | 147 | A | |||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | |||
| Power Dissipation (Tc=25) | PD | 296 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 120 | 130 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 96V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.6 | 3.1 | 3.6 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 3.2 | 4 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 5640 | - | pF |
| Output Capacitance | Coss | - | 835 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 13 | - | pF | |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 152 | - | nC |
| Gate-Source Charge | Qgs | - | 43 | - | nC | |
| Gate-Drain Charge | Qgd | - | 46 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 75A RG = 1.6 | - | 25 | - | nS |
| Rise Time | tr | - | 15 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Fall Time | tf | - | 18 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 92 | - | nS |
| Reverse Recovery Charge | Qrr | - | 183 | - | nC | |
| Package Outline Dimensions (TOLL) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP012N03BGHTO | TOLL | 2000 |
2504101957_Siliup-SP012N03BGHTO_C22385356.pdf
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