Power MOSFET SP025N16GHTD 250V N Channel Featuring Fast Switching and Low RDSon for PWM Applications
Key Attributes
Model Number:
SP025N16GHTD
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
70A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
10.9pF
Number:
1 N-channel
Pd - Power Dissipation:
315W
Output Capacitance(Coss):
362pF
Input Capacitance(Ciss):
5.654nF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
SP025N16GHTD
Package:
TO-263
Product Description
Product Overview
The SP025N16GHTD is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high-frequency circuits, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP025N16GHTD
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 250 | V | |||
| RDS(on) | RDS(on) | @10V | 16 | m | ||
| Continuous Drain Current | ID | 70 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 250 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 70 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 47 | A | ||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 315 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 250 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=200V, VGS=0V, TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=125V, VGS=0V, f=1MHz | - | 5654 | - | pF |
| Output Capacitance | Coss | - | 362 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10.9 | - | pF | |
| Total Gate Charge | Qg | VDS=125V, VGS=10V, ID=20A | - | 71 | - | nC |
| Gate-Source Charge | Qgs | - | 22.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 9.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=125V, VGS=10V, RG=10, ID=20A | - | 16.5 | - | nS |
| Rise Time | tr | - | 23.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 32 | - | nS | |
| Fall Time | tf | - | 16.6 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS =1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=200A/us, TJ=25 | - | 168 | - | nS |
| Reverse Recovery Charge | Qrr | - | 695 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
2506271732_Siliup-SP025N16GHTD_C49257240.pdf
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