Power management and DC DC converter applications using Siliup SP20N11NQ N Channel MOSFET 20V device
Key Attributes
Model Number:
SP20N11NQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
RDS(on):
19mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
98pF
Number:
1 N-channel
Output Capacitance(Coss):
158pF
Pd - Power Dissipation:
2.8W
Input Capacitance(Ciss):
782pF
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
SP20N11NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP20N11NQ is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power management functions and DC-DC converters. It features low on-resistance and low input capacitance, making it suitable for efficient power applications. The device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: 20N11
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on)TYP | @4.5V | 11.5 | m | ||
| @2.5V | 15 | m | ||||
| Continuous Drain Current | ID | 8 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulsed Drain Current | IDM | 32 | A | |||
| Power Dissipation | PD | 2.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 44.6 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 0.5 | 0.7 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =8A | - | 11.5 | 14.5 | m |
| VGS =2.5V, ID =4A | - | 15 | 19 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | - | 782 | - | pF |
| Output Capacitance | Coss | - | 158 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 98 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS=4.5V,ID =8A | - | 7 | - | nC |
| Gate-Source Charge | Qgs | - | 1 | - | ||
| Gate-Drain Charge | Qg | - | 2.4 | - | ||
| Turn-On Delay Time | Td(on) | VDD=10V, VGS=4.5V, RG=3, ID=1A | - | 3 | - | nS |
| Rise Time | Tr | - | 4.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28 | - | ||
| Fall Time | Tf | - | 6 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Package Information: PDFN2X2-6L | ||||||
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | ||
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP20N11NQ_C41354846.pdf
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