High reliability Siliup SP60P25NJ 60V P Channel MOSFET for power management and switching applications

Key Attributes
Model Number: SP60P25NJ
Product Custom Attributes
Pd - Power Dissipation:
37W
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V;30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
2.417nF
Gate Charge(Qg):
46.5nC@10V
Mfr. Part #:
SP60P25NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP60P25NJ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching speeds, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideally suited for DC-DC converters and power management circuits.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60P25NJ
  • Package Type: PDFN3X3-8L
  • Device Code: 60P25
  • Origin: China (implied by company website and product origin)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -60 V
On-Resistance (Typical) RDS(on)TYP -10V 25 m
On-Resistance (Typical) RDS(on)TYP -4.5V 30 m
Continuous Drain Current ID -25 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) -60 V
Gate-Source Voltage VGSS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current (Tc=25C) ID -25 A
Continuous Drain Current (Tc=100C) ID -17 A
Pulse Drain Current Tested IDM -100 A
Single Pulse Avalanche Energy EAS 156 mJ
Power Dissipation (Tc=25C) PD 37 W
Thermal Resistance Junction-to-Case RJC 3.4 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -60 - - V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-5A - 25 35 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-4A - 30 42 m
Input Capacitance Ciss VDS=-30V , VGS=0V , f=1MHz - 2417 - pF
Output Capacitance Coss - 179 - pF
Reverse Transfer Capacitance Crss - 120 - pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-6A - 46.5 - nC
Gate-Source Charge Qgs - 9.1 - nC
Gate-Drain Charge Qgd - 9.2 - nC
Turn-On Delay Time Td(on) VDD=-30V VGS=-10V , RG=3, ID=-6A - 9.8 - nS
Rise Time Tr - 6.1 - nS
Turn-Off Delay Time Td(off) - 44 - nS
Fall Time Tf - 12.7 - nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -25 A
Reverse recover time Trr IS=-20A, di/dt=-100A/us, Tj=25 - 25 - nS
Reverse recovery charge Qrr - 55 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF. 0.152 0.152 0.006 0.006
A2 0~0.05 0~0.002 0 0.05 0 0.002
D 2.900 - 3.100 0.114 - 0.122 2.900 3.100 0.114 0.122
D1 2.300 - 2.600 0.091 - 0.102 2.300 2.600 0.091 0.102
E 2.900 - 3.100 0.114 - 0.122 2.900 3.100 0.114 0.122
E1 3.150 - 3.450 0.124 - 0.136 3.150 3.450 0.124 0.136
E2 1.535 - 1.935 0.060 - 0.076 1.535 1.935 0.060 0.076
b 0.200 - 0.400 0.008 - 0.016 0.200 0.400 0.008 0.016
e 0.550 - 0.750 0.022 - 0.030 0.550 0.750 0.022 0.030
L 0.300 - 0.500 0.012 - 0.020 0.300 0.500 0.012 0.020
L1 0.180 - 0.480 0.007 - 0.019 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004 0 0.100 0 0.004
L3 0~0.100 0~0.004 0 0.100 0 0.004
H 0.315 - 0.515 0.012 - 0.020 0.315 0.515 0.012 0.020
9 - 13 9 - 13 9 13 9 13

Order Information:

Device Package Unit/Tape
SP60P25NJ PDFN3X3-8L 5000

Marking: 60P25 :Device Code * :Month Code


2504101957_Siliup-SP60P25NJ_C41355210.pdf

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