Dual P Channel MOSFET Siliup SP30P16DP8 30V Low Gate Charge Fast Switching Power Switching Component

Key Attributes
Model Number: SP30P16DP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V;21mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Number:
2 P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
1.36nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P16DP8
Package:
SOP-8L
Product Description

Product Overview

The SP30P16DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P16DP8
  • Device Code: 30P16D
  • Package: SOP-8L
  • Origin: China (implied by www.siliup.com)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS -30 V
RDS(on)TYP @-10V 16 20 m
RDS(on)TYP @-4.5V 21 30 m
ID -7.5 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -30 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Ta=25) -7.5 A
Pulsed Drain Current IDM (Ta=25) -30 A
Single Pulse Avalanche Energy EAS (Ta=25) 7.2 mJ
Power Dissipation PD (Ta=25) 1.5 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25) 85 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-4A 16 20 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-3A 21 30 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 1360 pF
Output Capacitance Coss VDS=-15V , VGS=0V , f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=-15V , VGS=0V , f=1MHz 200 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-10A 30 nC
Gate-Source Charge Qgs VDS=-15V , VGS=-10V , ID=-10A 3.5 nC
Gate-Drain Charge Qg d VDS=-15V , VGS=-10V , ID=-10A 9.2 nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A 9 nS
Rise Time Tr VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A 11 nS
Turn-Off Delay Time Td(off) VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A 23 nS
Fall Time Tf VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A 10 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A -1.2 V
Maximum Body-Diode Continuous Current IS -7.5 A
Reverse recovery time Trr IS=-5A, di/dt=100A/us, Tj=25 23 nS
Reverse recovery charge Qrr IS=-5A, di/dt=100A/us, Tj=25 15 nC
Package Information (SOP-8L)
Symbol Dimensions (mm) Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e (REF.) 1.27
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

Note: 1. The EAS Test condition is VDD=-15V, VGS =-10V, L = 0.1mH, Rg=25

Order Information: SP30P16DP8, SOP-8L, 4000 units/tape

Marking: 30P16D (Device Code), *: Week Code


2504101957_Siliup-SP30P16DP8_C41355084.pdf
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