1200V Silicon Carbide MOSFET Sichainsemi S1M014120H with Low On Resistance and Halogen Free Design
Key Attributes
Model Number:
S1M014120H
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
152A
RDS(on):
14mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.469nF
Pd - Power Dissipation:
625W
Output Capacitance(Coss):
235pF
Gate Charge(Qg):
230nC
Mfr. Part #:
S1M014120H
Package:
TO-247-4L
Product Description
Product Overview
The S1M014120H is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This MOSFET is halogen-free and RoHS compliant, contributing to reduced cooling effort, improved efficiency, increased power density, and higher system switching frequencies. Key applications include EV motor drives, PV string inverters, solar power optimizers, and switch-mode power supplies.
Product Attributes
- Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Product Line: SiC Power MOSFET
- Compliance: Halogen free, RoHS compliant
- Package Type: TO-247-4L
Technical Specifications
| Model | VDS (V) | IDS (TC = 25) (A) | RDS(ON), typ (VGS = 18V, ID = 100A, TJ = 25) (m) | Tj,max () | Package |
|---|---|---|---|---|---|
| S1M014120H | 1200 | 152 | 14 | 175 | TO247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions |
|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100 A |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values |
| ID | Continuous drain current | 152 | A | VGS = 18V, TC = 25C |
| ID | Continuous drain current | 108 | A | VGS = 18V, TC = 100C |
| ID(pulse) | Pulsed drain current | 340 | A | Pulse width tp limited by Tj,max |
| PD | Power dissipation | 625 | W | TC= 25C, TJ = 175C |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | |
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s |
| Rth(j-c) | Thermal resistance from junction to case | 0.24 | C/W | |
| Rth(j-a) | Thermal resistance from junction to ambient | 33 | C/W | Not subject to production test. Parameter verified by design/characterization. |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A |
| VGS(th) | Gate threshold voltage | 2.3 - 4 | V | VDS = VGS, ID = 28mA |
| VGS(th) | Gate threshold voltage | 2.0 | V | VDS = VGS, ID = 28mA, TJ = 175C |
| IDSS | Zero gate voltage drain current | - 100 | A | VDS = 1200V, VGS = 0V |
| IGSS | Gate source leakage current | - 100 | nA | VGS = 18V, VDS = 0V |
| RDS(on) | Current drain-source on-state resistance | 17 - 21 | m | VGS = 15V, ID = 100A |
| RDS(on) | Current drain-source on-state resistance | 28 | m | VGS = 15V, ID = 100A, TJ = 175C |
| RDS(on) | Current drain-source on-state resistance | 14 - 18 | m | VGS = 18V, ID = 100A |
| RDS(on) | Current drain-source on-state resistance | 27 | m | VGS = 18V, ID = 100A, TJ = 175C |
| gfs | Transconductance | 71 | S | VDS = 20V, ID = 100A |
| gfs | Transconductance | 63 | S | VDS = 20V, ID = 100A, TJ = 175C |
| Rg,int | Internal gate resistance | 0.9 | VAC = 25mV, f = 1MHz | |
| VSD | Diode forward voltage | 4.0 | V | VGS = -4V, ISD = 50A |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 50A, TJ = 175C |
| Ciss | Input capacitance | 5469 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz |
| Coss | Output capacitance | 235 | pF | |
| Crss | Reverse capacitance | 7.5 | pF | |
| Eoss | Coss stored energy | 150 | J | |
| Eon | Turn on switching energy | 812 | J | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| Eoff | Turn off switching energy | 383 | J | VDS = 800V, VGS = -4/+18V, ID = 100A, Rg = 2.5, L = 120uH |
| tdon | Turn on delay time | 19 | ns | |
| tr | Rise time | 29 | ns | |
| tdoff | Turn off delay time | 42 | ns | |
| tf | Fall time | 9.3 | ns | |
| VSD | Diode forward voltage | 4.0 | V | VGS = -4V, ISD = 50A |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 50A, TJ = 175C |
| IS | Continuous diode forward current | 152 | A | VGS = -4V, Tc = 25C |
| trr | Reverse recovery time | 66 | nS | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Qrr | Reverse recovery charge | 1830 | nC | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Irrm | Peak reverse recovery current | 52 | A | VR = 800V, VGS = -4V, ID = 100A, di/dt = 3000A/S, TJ = 175C |
| Qgs | Gate source charge | 54 | nC | VDS = 800V, VGS = -4/+18V, ID = 100A |
| Qgd | Gate drain charge | 45 | nC | VDS = 800V, VGS = -4/+18V, ID = 100A |
| Qg | Gate charge | 230 | nC | VDS = 800V, VGS = -4/+18V, ID = 100A |
2410121937_Sichainsemi-S1M014120H_C22363603.pdf
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