N Channel MOSFET 30 Volt with Low On Resistance and High Current Capability Siliup SP30N03ANJ Device
Key Attributes
Model Number:
SP30N03ANJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
65A
RDS(on):
2.9mΩ@10V;4.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 N-channel
Output Capacitance(Coss):
369pF
Input Capacitance(Ciss):
3.068nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
SP30N03ANJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP30N03ANJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speeds and low on-resistance, with typical RDS(on) values of 2.9m at 10V and 4.5m at 4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: PDFN3X3-8L
- Device Code: 30N03A
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @10V | 2.9 | 4.2 | m | |
| On-Resistance (Typ.) | RDS(on)TYP | @4.5V | 4.5 | m | ||
| Continuous Drain Current | ID | 65 | A | |||
| Single Pulse Avalanche Energy | EAS | 130 | mJ | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 2.9 | 4.2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=15A | - | 4.5 | - | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 3068 | - | pF |
| Output Capacitance | Coss | - | 369 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 289 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 44 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=3, ID=30A | - | 10 | - | nS |
| Rise Time | Tr | - | 29 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 46 | - | nS | |
| Fall Time | Tf | - | 17 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse recover time | Trr | IS=30A, di/dt=100A/us, Tj=25 | - | 17 | - | nS |
| Reverse recovery charge | Qrr | - | 7 | - | nC | |
| Package Dimensions (D) | 2.900 | - | 3.100 | mm | ||
| Package Dimensions (E) | 2.900 | - | 3.100 | mm |
2504101957_Siliup-SP30N03ANJ_C41354856.pdf
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