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quality High voltage Silicon Carbide MOSFET Sichainsemi SG2M040170HJ designed for EV battery charger applications factory
quality High voltage Silicon Carbide MOSFET Sichainsemi SG2M040170HJ designed for EV battery charger applications factory

High voltage Silicon Carbide MOSFET Sichainsemi SG2M040170HJ designed for EV battery charger applications

Key Attributes
Model Number: SG2M040170HJ
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
384W
Input Capacitance(Ciss):
2.594nF
Gate Charge(Qg):
78nC
Mfr. Part #:
SG2M040170HJ
Package:
TO-247-4L
Product Description

Product Overview

The SG2M040170HJ is a 1700V Silicon Carbide (SiC) Power MOSFET featuring high-speed switching, very low switching losses, and fully controllable dv/dt. It offers high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. This device is designed for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies, providing benefits like cooling effort reduction, efficiency improvement, and increased power density.

Product Attributes

  • Brand: SiC Power MOSFET (implied by product type and datasheet title)
  • Manufacturer: (Sichain Semiconductor (Ningbo) Co., Ltd.)
  • Model: SG2M040170HJ
  • Technology: Silicon Carbide (SiC)
  • Channel Type: N Channel Enhancement
  • Certifications: Halogen free, RoHS compliant
  • Package Type: TO-247-4L

Technical Specifications

Parameter Value Unit Conditions Notes
Drain-Source Voltage (VDS,max) 1700 V VGS = 0V, ID = 100A
Gate-Source Voltage (VGS,max) -8 / +22 V Absolute maximum values Note 1: when using MOSFET Body Diode VGS,max = -4 / +22V
Gate-Source Voltage (VGSop) -4 / +18 V Recommended operational values
Continuous Drain Current (ID) 66 A VGS = 18V, TC = 25C Fig.19
Continuous Drain Current (ID) 47 A VGS = 18V, TC = 100C
Pulsed Drain Current (ID(pulse)) 132 A Pulse width tP limited by TJ,max Fig.22
Power Dissipation (PD) 384 W TC= 25C,TJ = 175C Fig.20
Operating Junction and Storage Temperature (TJ ,Tstg) -55 to +175 C
Soldering Temperature (TL) 260 C 1.6mm (0.063) from case for 10s
Mounting Torque 1.8 Nm (lbf-in) M3 or 6-32 screw
Thermal Resistance Junction-to-Case (Rth(j-c)) 0.31 (typ.) C/W Fig.21
Drain-Source Breakdown Voltage (V(BR)DSS) 1700 V VGS = 0V, ID = 100A
Gate Threshold Voltage (VGS(th)) 3.1 (typ.) V VDS = VGS, ID = 12mA Fig.11
Gate Threshold Voltage (VGS(th)) 2.4 (typ.) V VDS = VGS, ID = 12mA TJ = 175C
Zero Gate Voltage Drain Current (IDSS) 10 (max.) A VDS = 1700V, VGS = 0V
Gate Source Leakage Current (IGSS) 100 (max.) nA VGS = 18V, VDS = 0V
Drain-Source On-State Resistance (RDS(on)) 40 (typ.) m VGS = 18V, ID = 38A Fig.4,5, 6
Drain-Source On-State Resistance (RDS(on)) 52 (max.) m VGS = 18V, ID = 38A Fig.4,5, 6
Drain-Source On-State Resistance (RDS(on)) 88 (typ.) m VGS = 18V, ID = 38A, TJ = 175C
Transconductance (gfs) 23 (typ.) S VDS = 20V, ID = 38A Fig.7
Transconductance (gfs) 22 (typ.) S VDS = 20V, ID = 38A, TJ = 175C
Internal Gate Resistance (Rg,int) 1.4 (typ.) VAC = 25mV, f = 1MHz, open drain
Input Capacitance (Ciss) 2594 (typ.) pF VDS = 1400V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Output Capacitance (Coss) 102 (typ.) pF VDS = 1400V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Reverse Capacitance (Crss) 5 (typ.) pF VDS = 1400V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Stored Energy (Eoss) 106 (typ.) J VDS = 1400V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.16
Gate Source Charge (Qgs) 26 (typ.) nC VDS = 1200V, VGS = -4/+18V, ID = 38A Fig.12
Gate Drain Charge (Qgd) 24 (typ.) nC VDS = 1200V, VGS = -4/+18V, ID = 38A Fig.12
Gate Charge (Qg) 78 (typ.) nC VDS = 1200V, VGS = -4/+18V, ID = 38A Fig.12
Turn on switching energy (Eon) 722 (typ.) J VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.26
Turn off switching energy (Eoff) 147 (typ.) J VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.26
Turn on delay time (td(on)) 37 (typ.) ns VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.27
Rise time (tr) 16 (typ.) ns VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.27
Turn off delay time (td(off)) 41 (typ.) ns VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.27
Fall time (tf) 11 (typ.) ns VDS = 1200V, VGS = -4/+18V, ID = 38A, Rg = 2.5, L = 120H Fig.27
Diode forward voltage (VSD) 3.7 (typ.) V VGS = -4V, ISD = 19A Fig.8,9, 10
Diode forward voltage (VSD) 3.2 (typ.) V VGS = -4V, ISD = 19A TJ = 175C
Continuous diode forward current (IS) 66 A VGS = -4V, Tc = 25C Note 2
Reverse recovery time (trr) 48 (typ.) ns VR = 1200V, VGS = -4V, ISD = 38A, di/dt = 2245A/s, TJ = 175C
Reverse recovery charge (Qrr) 840 (typ.) nC VR = 1200V, VGS = -4V, ISD = 38A, di/dt = 2245A/s, TJ = 175C
Peak reverse recovery current (Irrm) 28 (typ.) A VR = 1200V, VGS = -4V, ISD = 38A, di/dt = 2245A/s, TJ = 175C

2504101957_Sichainsemi-SG2M040170HJ_C42456100.pdf

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