High Power Complementary MOSFET Siliup SP6012CTM 60V Lead Free Surface Mount for Battery Protection
Key Attributes
Model Number:
SP6012CTM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
4.417nF
Pd - Power Dissipation:
80W
Gate Charge(Qg):
39nC@10V;63nC@10V
Mfr. Part #:
SP6012CTM
Package:
TO-252-4L
Product Description
Product Overview
The SP6012CTM is a 60V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as Battery Protection, Load Switches, and Power Management. This lead-free product is available in a surface mount TO-252-4L package and has undergone 100% Single Pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: TO-252-4L
- Certifications: Lead free product acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 15 | m | |||
| ID | 35 | A | ||||
| RDS(on)TYP | @4.5V | 17 | m | |||
| V(BR)DSS | -60 | V | ||||
| RDS(on)TYP | @-10V | 17 | m | |||
| ID | -60 | A | ||||
| RDS(on)TYP | @-4.5V | 23 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 (N-Ch) / -60 (P-Ch) | V | |||
| Gate-Source Voltage | VGS | 20 (N-Ch) / 20 (P-Ch) | V | |||
| Continuous Drain Current (TC=25) | ID | 35 (N-Ch) / -60 (P-Ch) | A | |||
| Continuous Drain Current (TC=100) | ID | 23 (N-Ch) / -40 (P-Ch) | A | |||
| Pulsed Drain Current | IDM | 140 (N-Ch) / -240 (P-Ch) | A | |||
| Single Pulse Avalanche Energy | EAS | 100 (N-Ch) / 182 (P-Ch) | mJ | |||
| Power Dissipation (TC=25) | PD | 80 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 15 | 19 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=8A | - | 17 | 23 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | - | 130 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 116 | - | ||
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | ||
| Gate-Drain Charge | Qgd | - | 9.5 | - | ||
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | - | 7.8 | - | nS |
| Rise Time | Tr | - | 48 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28 | - | ||
| Fall Time | Tf | - | 30 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 35 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | 84 | - | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | - | -1 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | - | 17 | 22 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | - | 23 | 33 | m |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 4417 | - | pF |
| Output Capacitance | Coss | - | 179 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 150 | - | ||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-10A | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | 18 | - | ||
| Gate-Drain Charge | Qgd | - | 9.2 | - | ||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=4.5,ID=-10A | - | 62 | - | nS |
| Rise Time | Tr | - | 76 | - | ||
| Turn-Off Delay Time | Td(off) | - | 371 | - | ||
| Fall Time | Tf | - | 157 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -60 | A | |
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | - | 33 | - | nS |
| Reverse Recovery Charge | Qrr | - | 36 | - | nC | |
| Package Information (TO-252-4L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 2.20 | 2.40 | ||||
| A1 | 0 | 0.15 | ||||
| b | 0.40 | 0.60 | ||||
| b2 | 0.50 | 0.80 | ||||
| b3 | 5.20 | 5.50 | ||||
| c2 | 0.45 | 0.55 | ||||
| D | 5.40 | 5.80 | ||||
| D1 | 4.57 | - | ||||
| E | 6.40 | 6.80 | ||||
| E1 | 3.81 | - | ||||
| e | 1.27REF. | |||||
| F | 0.40 | 0.60 | ||||
| H | 9.40 | 10.20 | ||||
| L | 1.40 | 1.77 | ||||
| L1 | 2.40 | 3.00 | ||||
| L4 | 0.80 | 1.20 | ||||
2504101957_Siliup-SP6012CTM_C41355094.pdf
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