86--136 6733 2386
quality SG2M023120LJ 1200V Silicon Carbide Power MOSFET with Fast Switching and Low Reverse Recovery Charge factory
quality SG2M023120LJ 1200V Silicon Carbide Power MOSFET with Fast Switching and Low Reverse Recovery Charge factory

SG2M023120LJ 1200V Silicon Carbide Power MOSFET with Fast Switching and Low Reverse Recovery Charge

Key Attributes
Model Number: SG2M023120LJ
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
97A
Operating Temperature -:
-55℃~+175℃
RDS(on):
31mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.4pF
Number:
1 N-channel
Output Capacitance(Coss):
147pF
Input Capacitance(Ciss):
2.78nF
Pd - Power Dissipation:
395W
Gate Charge(Qg):
95nC
Mfr. Part #:
SG2M023120LJ
Package:
TO-247-4L
Product Description

Product Overview

The SG2M023120LJ is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Featuring a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses, this device contributes to reduced cooling efforts, improved efficiency, and increased power density. It is suitable for applications such as on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.

Product Attributes

  • Brand: (Sichain)
  • Material: Silicon Carbide (SiC)
  • Package Type: TO-247-4L
  • Certifications: Halogen free, RoHS compliant

Technical Specifications

Model VDS (V) IDS (TC = 25) (A) RDS(on), typ (m) TJ,max () Package
SG2M023120LJ 1200 97 23 (VGS = 18V, ID = 49A, TJ = 25) 175 TO-247-4L
Symbol Parameter Value Unit Test Conditions Note
VDS,max Drain source voltage 1200 V VGS = 0V, ID = 100A
VGS,max Gate source voltage -8 /+22 V Absolute maximum values Note1
VGSop Gate source voltage -4 /+18 V Recommended operational values
ID Continuous drain current 97 A VGS = 18V, TC = 25C Fig.19
ID Continuous drain current 68 A VGS = 18V, TC = 100C
ID(pulse) Pulsed drain current 194 A Pulse width tP limited by TJ,max Fig.22
PD Power dissipation 395 W TC= 25C,TJ = 175C Fig.20
TJ ,Tstg Operating Junction and storage temperature -55 to +175 C
TL Soldering temperature 260 C 1.6mm (0.063) from case for 10s
TM Mounting torque 8.8 Nm lbf-in M3 or 6-32 screw
V(BR)DSS Drain-source breakdown voltage 1200 V VGS = 0V, ID = 100A
VGS(th) Gate threshold voltage 2.3 - 3.6 V VDS = VGS, ID = 14mA Fig.11
IDSS Zero gate voltage drain current - 10 A VDS = 1200V, VGS = 0V
IGSS Gate source leakage current - 100 nA VGS = 18V, VDS = 0V
RDS(on) Current drain-source on-state resistance 28 - 38 m VGS = 15V, ID = 49A Fig.4,5, 6
RDS(on) Current drain-source on-state resistance 44 m VGS = 15V, ID = 49A, TJ = 175C
RDS(on) Current drain-source on-state resistance 23 - 31 m VGS = 18V, ID = 49A
RDS(on) Current drain-source on-state resistance 42 m VGS = 18V, ID = 49A, TJ = 175C
gfs Transconductance 36 S VDS = 20V, ID = 49A Fig.7
Ciss Input capacitance 2780 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Coss Output capacitance 147 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Crss Reverse capacitance 7.4 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Eoss Coss stored energy 81 J VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.16
Qgs Gate source charge 28 nC VDS = 800V, VGS = -4/+18V, ID = 49A Fig.12
Qgd Gate drain charge 26 nC VDS = 800V, VGS = -4/+18V, ID = 49A Fig.12
Qg Gate charge 95 nC VDS = 800V, VGS = -4/+18V, ID = 49A Fig.12
Eon Turn on switching energy 562 J VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.26
Eoff Turn off switching energy 199 J VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.26
tdon Turn on delay time 17 ns VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.27
tr Rise time 20 ns VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.27
tdoff Turn off delay time 42 ns VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.27
tf Fall time 11 ns VDS = 800V, VGS = -4/+18V, ID = 49A, Rg = 2.5, L = 16.7H Fig.27
VSD Diode forward voltage 3.7 V VGS = -4V, ISD = 24.5A Fig.8,9, 10
VSD Diode forward voltage 3.3 V VGS = -4V, ISD = 24.5A, TJ = 175C
IS Continuous diode forward current 91 A VGS = -4V, Tc = 25C Note2
trr Reverse recovery time 30 ns VR = 800V, VGS = -4V, ISD = 49A, di/dt = 3787A/s, TJ = 175C
Qrr Reverse recovery charge 780 nC VR = 800V, VGS = -4V, ISD = 49A, di/dt = 3787A/s, TJ = 175C
Irrm Peak reverse recovery current 44 A VR = 800V, VGS = -4V, ISD = 49A, di/dt = 3787A/s, TJ = 175C
Rth(j-c) Thermal resistance from junction to case 0.30 - 0.38 C/W Fig.21

2504101957_Sichainsemi-SG2M023120LJ_C42456091.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.