100V N Channel MOSFET Siliup SP010N04AGHTQ with Advanced Split Gate Trench Technology and High Current
Key Attributes
Model Number:
SP010N04AGHTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Number:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
658pF
Input Capacitance(Ciss):
4.251nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP010N04AGHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N04AGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04AGHTQ
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-220-3L (1:G 2:D 3:S)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 130 | A | |||
| Continuous Drain Current (Tc=100) | ID | 90 | A | |||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | VDD=50V,VGS=10V,L=0.5mH,RG=25 | 841 | mJ | ||
| Power Dissipation (Tc=25) | PD | 180 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 4.2 | 5.3 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 4251 | - | pF |
| Output Capacitance | Coss | - | 658 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 26 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 69 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | nC | |
| Gate-Drain Charge | Qg | - | 18 | - | nC | |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, RL=2.5 , RG = 3.0 | - | 12 | - | nS |
| Rise Time | tr | - | 23 | - | ||
| Turn-Off Delay Time | td(off) | - | 37 | - | nS | |
| Fall Time | tf | - | 16 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | - | 126 | - | nC |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP010N04AGHTQ_C42372366.pdf
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