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quality Power Management 100V P Channel MOSFET Siliup SP010P80TQ with Single Pulse Avalanche Energy Testing factory
quality Power Management 100V P Channel MOSFET Siliup SP010P80TQ with Single Pulse Avalanche Energy Testing factory

Power Management 100V P Channel MOSFET Siliup SP010P80TQ with Single Pulse Avalanche Energy Testing

Key Attributes
Model Number: SP010P80TQ
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V;88mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Number:
1 P-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Output Capacitance(Coss):
129pF
Pd - Power Dissipation:
96W
Input Capacitance(Ciss):
3.329nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
SP010P80TQ
Package:
TO-220-3L-C
Product Description

Product Overview

The SP010P80TQ is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET offers fast switching, low gate charge, and low Rdson. It features 100% single pulse avalanche energy testing and comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010P80TQ
  • Package: TO-220-3L (1:G 2:D 3:S)
  • Marking: 010P80

Technical Specifications

Parameter Symbol Rating Units
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID -23 A
Continuous Drain Current (Tc=100) ID -15 A
Pulsed Drain Current IDM -92 A
Single Pulse Avalanche Energy EAS 100 mJ
Power Dissipation (Tc=25) PD 96 W
Thermal Resistance Junction-to-Case RJC 1.3 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS -100 V
Drain Cut-Off Current IDSS -1 A
Gate Leakage Current IGSS 100 nA
Gate Threshold Voltage VGS(th) -1.0 to -2.5 V
Static Drain-Source On-Resistance (VGS=-10V) RDS(ON) 80 to 95 m
Static Drain-Source On-Resistance (VGS=-4.5V) RDS(ON) 88 to 110 m
Input Capacitance Ciss 3329 pF
Output Capacitance Coss 129 pF
Reverse Transfer Capacitance Crss 76 pF
Total Gate Charge Qg 46 nC
Gate-Source Charge Qgs 9 nC
Gate-Drain Charge Qg d 6 nC
Turn-On Delay Time td(on) 15 nS
Rise Time tr 72 nS
Turn-Off Delay Time td(off) 35 nS
Fall Time tf 56 nS
Source-Drain Diode Forward Voltage VSD -1.2 V
Maximum Body-Diode Continuous Current IS -23 A
Reverse Recovery Time Trr 88 nS
Reverse Recovery Charge Qrr 66 nC
Package Information (TO-220-3L) Dimensions In Millimeters Dimensions In Inches
Symbol Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP010P80TQ_C41355222.pdf

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