30V P Channel MOSFET Siliup SP30P08P8 with 15A continuous drain current and avalanche energy testing
Product Overview
The SP30P08P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on) with a continuous drain current of -15A. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P08P8
- Channel Type: P-Channel
- Marking: 30P08
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ. | RDS(on) | @-10V | 8 | m | ||
| RDS(on) Typ. | RDS(on) | @-4.5V | 10.5 | m | ||
| Continuous Drain Current | ID | -15 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -15 | A | |||
| Pulsed Drain Current | IDM | -60 | A | |||
| Single pulsed avalanche energy | EAS | 1 | 36 | mJ | ||
| Power Dissipation | PD | 2.5 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 8 | 12 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 10.5 | 15 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 2900 | pF | ||
| Output Capacitance | Coss | 410 | pF | |||
| Reverse Transfer Capacitance | Crss | 280 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 48 | nC | ||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qgd | 14 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | 15 | nS | ||
| Rise Time | Tr | 11 | nS | |||
| Turn-Off Delay Time | Td(off) | 44 | nS | |||
| Fall Time | Tf | 21 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -15 | A | |||
| Reverse recover time | Trr | IS=-10A, di/dt=100A/us, TJ=25 | 42 | nS | ||
| Reverse recovery charge | Qrr | 19 | nC | |||
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Dimensions (A) | Millimeters | 1.35 | 1.75 | |||
| Dimensions (A1) | Millimeters | 0.10 | 0.25 | |||
| Dimensions (A2) | Millimeters | 1.35 | 1.55 | |||
| Dimensions (b) | Millimeters | 0.33 | 0.51 | |||
| Dimensions (c) | Millimeters | 0.17 | 0.25 | |||
| Dimensions (D) | Millimeters | 4.80 | 5.00 | |||
| Dimensions (e) | REF. | 1.27 | ||||
| Dimensions (E) | Millimeters | 5.80 | 6.20 | |||
| Dimensions (E1) | Millimeters | 3.80 | 4.00 | |||
| Dimensions (L) | Millimeters | 0.40 | 1.27 | |||
| Dimensions () | Degrees | 0 | 8 | |||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30P08P8 | SOP-8L | 4000 | ||||
2504101957_Siliup-SP30P08P8_C41355016.pdf
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