30V P Channel MOSFET Siliup SP30P08P8 with 15A continuous drain current and avalanche energy testing

Key Attributes
Model Number: SP30P08P8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V;10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Output Capacitance(Coss):
410pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
2.9nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP30P08P8
Package:
SOP-8L
Product Description

Product Overview

The SP30P08P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on) with a continuous drain current of -15A. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P08P8
  • Channel Type: P-Channel
  • Marking: 30P08

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) Typ. RDS(on) @-10V 8 m
RDS(on) Typ. RDS(on) @-4.5V 10.5 m
Continuous Drain Current ID -15 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID -15 A
Pulsed Drain Current IDM -60 A
Single pulsed avalanche energy EAS 1 36 mJ
Power Dissipation PD 2.5 W
Junction-to-Ambient Thermal Resistance RJA 50 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-15A 8 12 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-10A 10.5 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 2900 pF
Output Capacitance Coss 410 pF
Reverse Transfer Capacitance Crss 280 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-10A 48 nC
Gate-Source Charge Qgs 12 nC
Gate-Drain Charge Qgd 14 nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V,VGS=-10V,RG=3, ID=-10A 15 nS
Rise Time Tr 11 nS
Turn-Off Delay Time Td(off) 44 nS
Fall Time Tf 21 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A -1.2 V
Maximum Body-Diode Continuous Current IS -15 A
Reverse recover time Trr IS=-10A, di/dt=100A/us, TJ=25 42 nS
Reverse recovery charge Qrr 19 nC
Package Information
Package Type SOP-8L
Dimensions (A) Millimeters 1.35 1.75
Dimensions (A1) Millimeters 0.10 0.25
Dimensions (A2) Millimeters 1.35 1.55
Dimensions (b) Millimeters 0.33 0.51
Dimensions (c) Millimeters 0.17 0.25
Dimensions (D) Millimeters 4.80 5.00
Dimensions (e) REF. 1.27
Dimensions (E) Millimeters 5.80 6.20
Dimensions (E1) Millimeters 3.80 4.00
Dimensions (L) Millimeters 0.40 1.27
Dimensions () Degrees 0 8
Order Information
Device Package Unit/Tape
SP30P08P8 SOP-8L 4000

2504101957_Siliup-SP30P08P8_C41355016.pdf

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