Silicon PNP Transistor Siliup MMBT3906T7 Featuring 40V Collector Emitter Voltage and Compact SOT 723 Package
Key Attributes
Model Number:
MMBT3906T7
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
400mV@50mA,5mA
Type:
-
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906T7
Package:
SOT-723
Product Description
Product Overview
The MMBT3906T7 is a general-purpose PNP silicon transistor designed for switching applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for various electronic circuits. This transistor is housed in a compact SOT-723 package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Type: General Purpose Transistor
- Material: Silicon
- Configuration: PNP
- Package: SOT-723
- Marking: MMBT3906T7
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | |||||
| Collector Base Voltage | VCBO | -40 | V | ||
| Collector Emitter Voltage | VCEO | -40 | V | ||
| Emitter Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -200 | mA | ||
| Power Dissipation | Ptot | 100 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature Range | Tstg | -55 | +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | |||||
| Collector-base breakdown voltage | BVCBO | IC=-100A ,IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | BVCEO | IC=-100A , IB=0 | -40 | V | |
| Emitter-base breakdown voltage | BVEBO | IE=-100A,IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB=-30V, IE=0 | -100 | nA | |
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -50 | nA | |
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | |
| DC current gain | hFE1 | VCE=-1V, IC=-0.1mA | 60 | ||
| hFE2 | VCE=-1V, IC=-1mA | 80 | |||
| hFE3 | VCE=-1V, IC=-10mA | 100 | 300 | ||
| hFE4 | VCE=-1V, IC=-50mA | 60 | |||
| hFE5 | VCE=-1V, IC=-100mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.25 | V | |
| VCE(sat) | IC=-50mA, IB=-5mA | -0.4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -0.85 | V | |
| VBE(sat) | IC=-50mA, IB=-5mA | -0.95 | V | ||
| Transition frequency | fT | VCE= -20V, IC=-10mA,f=30MHz | 250 | MHZ | |
| SOT-723 Package Information (Dimensions in Millimeters) | |||||
| Symbol | Min. | Max. | |||
| A | 0.430 | 0.500 | |||
| A1 | 0.000 | 0.050 | |||
| b | 0.170 | 0.270 | |||
| b1 | 0.270 | 0.370 | |||
| c | 0.080 | 0.150 | |||
| D | 1.150 | 1.250 | |||
| E | 1.150 | 1.250 | |||
| E1 | 0.750 | 0.850 | |||
| e | 0.800 (TYP.) | ||||
| 7 (REF.) | |||||
2411212332_Siliup-MMBT3906T7_C41355096.pdf
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