Low On Resistance 30 Volt P Channel MOSFET Siliup SP30P16NQ for Power Management and DC DC Converter
Key Attributes
Model Number:
SP30P16NQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.5A
RDS(on):
16mΩ@10V;20mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
1.36nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P16NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP30P16NQ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. It is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: P-Channel MOSFET
- Device Code: 30P16
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ. | @-10V | 16 | m | |||
| ID | -8.5 | A | ||||
| RDS(on) Typ. | @-4.5V | 20 | m | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -8.5 | A | |||
| Pulsed Drain Current | IDM | -34 | A | |||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 41.7 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-6A | - | 16 | 22 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-4A | - | 20 | 30 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1360 | - | pF |
| Output Capacitance | Coss | - | 250 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 200 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qg | - | 9.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | - | 9 | - | nS |
| Rise Time | Tr | - | 11 | - | ||
| Turn-Off Delay Time | Td(off) | - | 23 | - | ||
| Fall Time | Tf | - | 10 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information | ||||||
| Package Type | PDFN2X2-6L | |||||
| Device Code | 30P16 | |||||
| Marking | 30P16 :Device Code | |||||
| Order Information | SP30P16NQ | |||||
| Unit/Tape | 3000 | |||||
2504101957_Siliup-SP30P16NQ_C41355026.pdf
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