power management solution featuring Siliup SP20N02NJ N Channel MOSFET with 20V drain source voltage
Key Attributes
Model Number:
SP20N02NJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
80A
RDS(on):
2.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
833pF
Number:
1 N-channel
Output Capacitance(Coss):
932pF
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
5.238nF
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
SP20N02NJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP20N02NJ is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching speeds, low on-resistance, and is 100% tested for single pulse avalanche energy. This MOSFET is ideal for use in DC-DC converters and other power management circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: 20N02
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 2.2 | m | ||
| @4.5V | 2.5 | m | ||||
| @2.5V | 3.2 | mR | ||||
| Continuous Drain Current | ID | 80 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | 80 | A | ||
| Pulse Drain Current | IDM | Tested | 320 | A | ||
| Single Pulse Avalanche Energy | EAS | 700 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 85 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.47 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 2.2 | 3 | m |
| VGS= 4.5V, ID=20A | - | 2.5 | 4 | |||
| VGS= 2.5V, ID=20A | - | 3.2 | 4.5 | |||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 5238 | - | pF |
| Output Capacitance | Coss | - | 932 | - | ||
| Reverse Transfer Capacitance | Crss | - | 833 | - | ||
| Total Gate Charge | Qg | VDS=4.5V , VGS=10V , ID=40A | - | 55 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | ||
| Gate-Drain Charge | Qg | - | 2.8 | - | ||
| Turn-On Delay Time | Td(on) | VDD=4.5V, VGS=10V , RG=3, ID=40A | - | 8 | - | nS |
| Rise Time | Tr | - | 26 | - | ||
| Turn-Off Delay Time | Td(off) | - | 55 | - | ||
| Fall Time | Tf | - | 35 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | 5 | - | A | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP20N02NJ_C41354836.pdf
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