Power Management Device Siliup SP40N06NJ 40V N Channel MOSFET with Fast Switching and Low On Resistance
Key Attributes
Model Number:
SP40N06NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
6.3mΩ@10V;9.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 N-channel
Output Capacitance(Coss):
283pF
Input Capacitance(Ciss):
1.733nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
8.3nC@20V
Mfr. Part #:
SP40N06NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP40N06NJ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance (6.3m@10V, 9.5m@4.5V), and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N06NJ
- Technology: N-Channel MOSFET
- Package: PDFN3X3-8L
- Device Code: 40N06
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | - | V |
| Continuous Drain Current | ID | (TC=25°C) | - | - | 40 | A |
| Pulse Drain Current | IDM | Tested | - | - | 160 | A |
| Single Pulse Avalanche Energy | EAS | (VDD=20V, VG=10V, L=0.1mH, Rg=25Ω) | - | - | 72 | mJ |
| Power Dissipation | PD | (TC=25°C) | - | - | 40 | W |
| Thermal Resistance Junction-to-Case | RθJC | - | - | - | 3 | °C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | °C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | °C |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25°C | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 6.3 | 8.5 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 9.5 | 12 | mΩ |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1733 | - | pF |
| Output Capacitance | Coss | - | - | 283 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 141 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=20V , ID=10A | - | 8.3 | - | nC |
| Gate-Source Charge | Qgs | - | - | 2.4 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 3.4 | - | nC |
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V , RG=3Ω, ID=2A | - | 3.5 | - | nS |
| Rise Time | tr | - | - | 3.7 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 17.1 | - | nS |
| Fall Time | tf | - | - | 6.4 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25°C | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | - | 40 | A |
| Reverse recover time | trr | IS=20A, di/dt=100A/us, TJ=25°C | - | 15 | - | nS |
| Reverse recovery charge | Qrr | - | - | 3 | - | nC |
| Package | Dimensions In Millimeters | Dimensions In Inches | ||||
|---|---|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. | ||
| PDFN3X3-8L | A | 0.650 | 0.850 | 0.026 | 0.033 | |
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| θ | 9° | 13° | 9° | 13° | ||
2504101957_Siliup-SP40N06NJ_C41355043.pdf
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