ROHS Compliant 30V MOSFET Siliup SP3011CNJ PDFN3X3 8L Package with Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
SP3011CNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
18A;16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;176pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
940pF;1.316nF
Output Capacitance(Coss):
131pF;180pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
9.6nC@4.5V;26nC@10V
Mfr. Part #:
SP3011CNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP3011CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers fast switching speeds and is available in a surface mount PDFN3X3-8L package. It is ROHS compliant, Halogen-Free, and 100% Single Pulse avalanche energy tested. Ideal for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP3011CNJ
- Package: PDFN3X3-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (V(BR)DSS) | V(BR)DSS | 30V | -30V | V | ||
| On-Resistance (RDS(on)) | RDS(on) | @10V | 11m | @-10V | 14m | m |
| RDS(on) | @4.5V | 17m | @-4.5V | 18m | m | |
| Continuous Drain Current (ID) | ID | 18A | -16A | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | N-Channel | 30 | P-Channel | -30 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 18 | -16 | A | ||
| Pulse Drain Current (Tested) | IDM | 72 | -64 | A | ||
| Single pulsed avalanche energy1 | EAS | 42 | 68 | mJ | ||
| Power Dissipation (Tc=25C) | PD | 20 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 6.25 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| N-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 8A | - 11 15 | m | ||
| RDS(ON) | VGS = 4.5V, ID = 6A | - 17 23 | m | |||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - 940 - | pF | ||
| Output Capacitance | Coss | - 131 - | pF | |||
| Reverse Transfer Capacitance | Crss | - 109 - | pF | |||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - 9.6 - | nC | ||
| Gate-Source Charge | Qgs | - 3.9 - | ||||
| Gate-Drain Charge | Qgd | - 3.4 - | ||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - 4.2 - | nS | ||
| Rise Time | Tr | - 8.2 - | nS | |||
| Turn-Off Delay Time | Td(off) | - 31 - | nS | |||
| Fall Time | Tf | - 4 - | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - - 1.2 | V | ||
| Diode Continuous Current | IS | - - 18 | A | |||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - 1.2 - | nS | ||
| Reverse recovery charge | Qrr | - 9 - | nC | |||
| P-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - - -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - - 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 -2.5 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-8A | - 14 21 | m | ||
| RDS(ON) | VGS =-4.5V, ID =-6A | - 18 27 | m | |||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - 1316 - | pF | ||
| Output Capacitance | Coss | - 180 - | pF | |||
| Reverse Transfer Capacitance | Crss | - 176 - | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - 26 - | nC | ||
| Gate-Source Charge | Qgs | - 2.4 - | ||||
| Gate-Drain Charge | Qgd | - 7 - | ||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=6, ID=-1A | - 10 - | nS | ||
| Rise Time | Tr | - 5 - | nS | |||
| Turn-Off Delay Time | Td(off) | - 76 - | nS | |||
| Fall Time | Tf | - 60 - | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - - -1.2 | V | ||
| Diode Continuous Current | IS | - - -16 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - 62 - | nS | ||
| Reverse recovery charge | Qrr | - 37 - | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | Dimensions In Inches | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 0.935 | 1.135 | 0.037 | 0.045 | ||
| D2 | 0.280 | 0.480 | 0.011 | 0.019 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP3011CNJ_C22385435.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
