Surface Mount 20V Dual P Channel MOSFET Siliup SP2006KDTL Featuring 2KV ESD Protection for Power Electronics
Key Attributes
Model Number:
SP2006KDTL
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
2 P-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
75pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SP2006KDTL
Package:
SOT-563
Product Description
Product Overview
The SP2006KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP2006KDTL
- Package: SOT-563
- Device Code: 06K
- Features: High power and current handling capability, Surface mount package, ESD protected 2KV
- Applications: Battery Switch, DC/DC Converter
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 650 | m | |||
| RDS(on) | @-2.5V | 850 | m | |||
| ID | -0.66 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Pulse Drain Current | IDM | Tested | -2.64 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 650 | 750 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | 850 | 1000 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 75 | pF | ||
| Output Capacitance | Coss | 20 | pF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-0.5A | 1.25 | nC | ||
| Gate-Source Charge | Qgs | 0.35 | ||||
| Gate-Drain Charge | Qgd | 0.27 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS | ||
| Turn-On Rise Time | tr | 19 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 24 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-563) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.525 | 0.600 | ||||
| A1 | 0.000 | 0.050 | ||||
| e | 0.450 | 0.550 | ||||
| c | 0.090 | 0.160 | ||||
| D | 1.500 | 1.700 | ||||
| b | 0.170 | 0.270 | ||||
| E1 | 1.100 | 1.300 | ||||
| E | 1.500 | 1.700 | ||||
| L | 0.100 | 0.300 | ||||
| L1 | 0.200 | 0.400 | ||||
| Ref. | 7 | |||||
2504101957_Siliup-SP2006KDTL_C41354833.pdf
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