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quality p channel mosfet 60 volt 5 amp continuous current Siliup SP60P60TS for battery switch and converter factory
quality p channel mosfet 60 volt 5 amp continuous current Siliup SP60P60TS for battery switch and converter factory

p channel mosfet 60 volt 5 amp continuous current Siliup SP60P60TS for battery switch and converter

Key Attributes
Model Number: SP60P60TS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
60mΩ@10V;75mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 P-Channel
Output Capacitance(Coss):
77pF
Input Capacitance(Ciss):
1.09nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP60P60TS
Package:
SOT-23-6L
Product Description

Product Overview

The SP60P60TS is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling capability, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5A and low on-resistance.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP60P60TS
  • Package: SOT-23-6L
  • Circuit Diagram: 60P60

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -60 V
Static Drain-Source On-Resistance RDS(on) -10V 60 80 m
Static Drain-Source On-Resistance RDS(on) -4.5V 75 110 m
Continuous Drain Current ID -5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID -5 A
Pulse Drain Current IDM Tested -20 A
Power Dissipation PD 1 W
Thermal Resistance Junction-to-Ambient RJA 125 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -60 V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -1 -2 -3 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID =-2A 60 80 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID =-2A 75 110 m
Input Capacitance Ciss VDS=-30V , VGS=0V , f=1MHz 1090 pF
Output Capacitance Coss 77 pF
Reverse Transfer Capacitance Crss 58 pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-5A 23 nC
Gate-Source Charge Qgs 4.2 nC
Gate-Drain Charge Qg d 4.8 nC
Turn-On Delay Time td(on) VDD=-30V VGS=-10V , RG=3 , ID=-5A 9.8 nS
Turn-On Rise Time tr 6.1 nS
Turn-Off Delay Time td(off) 44 nS
Turn-Off Fall Time tf 12.7 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23-6L)
Symbol Dimensions In Millimeters Min Max
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
E1 2.650 2.950 0.104 0.116
e 0.950(BSC) 0.037(BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
0 8 0 8

2504101957_Siliup-SP60P60TS_C41354817.pdf

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