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quality 20V P Channel MOSFET Siliup SP2013T1 11A Continuous Drain Current SOT23 Package Surface Mount factory
quality 20V P Channel MOSFET Siliup SP2013T1 11A Continuous Drain Current SOT23 Package Surface Mount factory

20V P Channel MOSFET Siliup SP2013T1 11A Continuous Drain Current SOT23 Package Surface Mount

Key Attributes
Model Number: SP2013T1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
11A
RDS(on):
13.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 P-Channel
Output Capacitance(Coss):
215pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
1.8nF
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
SP2013T1
Package:
SOT-23-3L
Product Description

Product Overview

The SP2013T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling capability, this surface mount device is suitable for applications such as battery switches and DC/DC converters. It features a SOT-23-3L package and offers robust performance characteristics.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2013T1
  • Package Type: SOT-23-3L
  • Circuit Diagram: Provided
  • Marking: 2013 (Device Code)

Technical Specifications

Parameter Symbol Conditions Value Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
RDS(on) Typ @-4.5V 13.5 m
RDS(on) Typ @-2.5V 16 m
Continuous Drain Current ID -11 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -11 A
Pulse Drain Current IDM Tested -44 A
Power Dissipation PD 1.3 W
Thermal Resistance Junction-to-Ambient RJA 96 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V - 1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.4 to -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-5A 13.5 to 17 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-4A 16 to 25 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 1800 pF
Output Capacitance Coss 215 pF
Reverse Transfer Capacitance Crss 176 pF
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-7A 16 nC
Gate-Source Charge Qgs 4.3 nC
Gate-Drain Charge Qgd 3.6 nC
Turn-On Delay Time td(on) VDD=-6V VGS=-4.5V , RG=3, ID=-7A 8 nS
Turn-On Rise Time tr 34 nS
Turn-Off Delay Time td(off) 65 nS
Turn-Off Fall Time tf 70 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23-3L)
Symbol Dimensions (mm) Min. Max. Typ.
A 1.050 1.250
A1 0.000 0.100
A2 1.050 1.150
b 0.300 0.500
c 0.100 0.200
D 2.820 3.020
E 1.500 1.700
E1 2.650 2.950
e 0.950
e1 1.800 to 2.000
L 0.300 0.600
0 8

2504101957_Siliup-SP2013T1_C41354946.pdf

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