Dual N Channel MOSFET Siliup SP6005ADP8 60V 5.5A Low On Resistance Power Switching Component

Key Attributes
Model Number: SP6005ADP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
2 N-Channel
Output Capacitance(Coss):
123pF
Input Capacitance(Ciss):
1.304nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
25.3nC@10V
Mfr. Part #:
SP6005ADP8
Package:
SOP-8L
Product Description

Product Overview

The SP6005ADP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP6005ADP8
  • Product Type: Dual N-Channel MOSFET
  • Package: SOP-8L
  • Marking: 6005A (Device Code), * (Week Code)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS 60 V
On-Resistance (Typical) RDS(on)TYP @10V 23 m
On-Resistance (Typical) RDS(on)TYP @4.5V 30 m
Continuous Drain Current ID 5.5 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 60 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25, unless otherwise noted) 5.5 A
Pulsed Drain Current IDM (Ta=25, unless otherwise noted) 22 A
Single Pulse Avalanche Energy EAS (Ta=25, unless otherwise noted) 20 mJ
Power Dissipation PD (Ta=25, unless otherwise noted) 2.5 W
Junction-to-Ambient Thermal Resistance RJA (Ta=25, unless otherwise noted) 50 /W
Storage Temperature Range TSTG (Ta=25, unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25, unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=5A - 23 35 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=3A - 30 45 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1304 - pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz - 123 - pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz - 97 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=10A - 25.3 - nC
Gate-Source Charge Qgs VDS=30V , VGS=10V , ID=10A - 4.7 - nC
Gate-Drain Charge Qg d VDS=30V , VGS=10V , ID=10A - 6.1 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=2A - 6 - nS
Rise Time Tr VDD=30V, VGS=10V , RG=3, ID=2A - 6.1 - nS
Turn-Off Delay Time Td(off) VDD=30V, VGS=10V , RG=3, ID=2A - 17 - nS
Fall Time Tf VDD=30V, VGS=10V , RG=3, ID=2A - 3 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 5.5 A
Reverse Recovery Time Trr IS=5A, di/dt=100A/us, Tj=25 - 24 - nS
Reverse Recovery Charge Qrr IS=5A, di/dt=100A/us, Tj=25 - 21 - nC
Package Information (SOP-8L)
Dimension A 1.35 1.75 mm
Dimension A1 0.10 0.25 mm
Dimension A2 1.35 1.55 mm
Dimension b 0.33 0.51 mm
Dimension c 0.17 0.25 mm
Dimension D 4.80 5.00 mm
Dimension e (Pitch) 1.27 REF.
Dimension E 5.80 6.20 mm
Dimension E1 3.80 4.00 mm
Dimension L 0.40 1.27 mm
Dimension 0 8
Order Information Package Unit/Tape
SP6005ADP8 SOP-8L 4000

2504101957_Siliup-SP6005ADP8_C41355072.pdf

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