power switching solution featuring Siliup SP30N01BGNK 30V N Channel Power MOSFET with low gate charge

Key Attributes
Model Number: SP30N01BGNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V;1.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
197pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.997nF
Output Capacitance(Coss):
1.662nF
Pd - Power Dissipation:
105W
Gate Charge(Qg):
95nC@10V
Mfr. Part #:
SP30N01BGNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N01BGNK is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device has undergone 100% single pulse avalanche energy testing, ensuring reliability in demanding applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: Power MOSFET
  • Channel Type: N-Channel
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on) 10V 1.2 m
RDS(on)TYP RDS(on) 4.5V 1.6 m
ID ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) Package Limit ID 120 A
Continuous Drain Current (Tc=25) Silicon Limit ID 170 A
Continuous Drain Current (Tc=100) ID 80 A
Pulsed Drain Current IDM 480 A
Single Pulse Avalanche Energy EAS 552 mJ
Power Dissipation (Tc=25) PD 105 W
Thermal Resistance Junction-to-Case RJC 1.19 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain Cut-Off Current IDSS VDS=24V , VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A - 1.2 1.5 m
Drain-Source ON Resistance RDS(ON) VGS=4.5V , ID=15A - 1.6 2.2 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHZ - 3997 - pF
Output Capacitance Coss - 1662 - pF
Reverse Transfer Capacitance Crss - 197 - pF
Total Gate Charge Qg VGS=10V,VDS=15V,ID=12A - 95 - nC
Gate-Source Charge Qgs - 18 -
Gate-Drain Charge Qg - 17.8 -
Switching Characteristics
Turn-On Delay Time td(on) VGS=10V,VDD=15V, ID=12A, RGEN=2 - 13 - nS
Rise Time tr - 8 -
Turn-Off Delay Time td(off) - 50 -
Fall Time tf - 9 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 120 A
Reverse Recovery Time Trr IS=30A, di/dt=100A/us, TJ=25 - 65 - nS
Reverse Recovery Charge Qrr - 96 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

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