power management solution featuring Siliup SP30N06NK 30V N Channel MOSFET with fast switching speeds

Key Attributes
Model Number: SP30N06NK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
RDS(on):
6mΩ@10V;9.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
1.378nF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
33.7nC@10V
Mfr. Part #:
SP30N06NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N06NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters and motor control. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on)TYP @10V 6 m
RDS(on)TYP RDS(on)TYP @4.5V 9.5 m
ID ID 55 A
Absolute maximum ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 55 A
Continuous Drain Current (Tc=100C) ID 37 A
Pulse Drain Current Tested IDM 220 A
Single pulsed avalanche energy EAS 100 mJ
Power Dissipation (Tc=25C) PD 30 W
Thermal Resistance Junction-to-Case RJC 4.2 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =12A - 6 8 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =10A - 9.5 13.5 m
Dynamic characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1378 - pF
Output Capacitance Coss - 195 - pF
Reverse Transfer Capacitance Crss - 155 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 33.7 - nC
Gate-Source Charge Qgs - 8.5 -
Gate-Drain Charge Qg d - 7.5 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V, VGS=10V , RG=3, ID=30A - 7.5 - nS
Rise Time Tr - 14.5 -
Turn-Off Delay Time Td(off) - 35.2 -
Fall Time Tf - 9.6 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 55 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 11 - nS
Reverse recovery charge Qrr - 5 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
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2504101957_Siliup-SP30N06NK_C41354869.pdf

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