Complementary MOSFET 60V lead free surface mount device Siliup SP6023CP8 for power management circuits
Product Overview
The SP6023CP8 is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with distinct N-channel and P-channel characteristics for versatile circuit designs.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Lead Status: Lead free product is acquired
- Package Type: SOP-8L
- Marking: 6023C (Device Code)
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | -60 | V |
| VGS=0V , ID=250uA | - | VGS=0V , ID=-250uA | - | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| 20 | V | |||||
| Continuous Drain Current | ID | - | 7 | - | -10 | A |
| - | - | - | - | A | ||
| Pulsed Drain Current | IDM | - | 28 | - | -40 | A |
| - | - | - | - | A | ||
| Single Pulse Avalanche Energy | EAS | VDD=20V,VGS=10V,L=0.5mH,RG=25 | 18 | VDD=-20V,VGS=-10V,L=0.5mH,RG=25 | 36 | mJ |
| - | - | - | - | mJ | ||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | VGS=0V , ID=-250uA | -60 | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | VDS=-48V , VGS=0V , TJ=25 | - | uA |
| Gate-Source Leakage Current | IGSS | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 to 2.5 | VGS=VDS , ID =-250uA | -1.0 to -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=2A | 23 to 29 m | VGS=-10V , ID=-2A | 30 to 38 m | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | 30 to 40 m | VGS=-4.5V , ID=-1A | 35 to 47 m | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1640 | VDS=-30V , VGS=0V , f=1MHz | 2417 | pF |
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 106 | pF | |||
| Total Gate Charge | Qg | VDS=48V , VGS=4.5V , ID=10A | 42 | VDS=-30V , VGS=-10V , ID=-6A | 46.5 | nC |
| Gate-Source Charge | Qgs | 8 | nC | |||
| Gate-Drain Charge | Qg d | 11.5 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | 9 | VDD=-30V VGS=-10V , RG=3, ID=-5A | 9.8 | nS |
| Rise Time | Tr | 10.5 | nS | |||
| Turn-Off Delay Time | Td(off) | 36 | nS | |||
| Fall Time | Tf | 5 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 7 | A | |||
| Maximum Body-Diode Continuous Current | IS | -10 | A | |||
| Reverse Recovery Time | Trr | IS=7A, di/dt=100A/us, TJ=25 | 35 | IS=-9A, di/dt=-100A/us, Tj=25 | 30 | nS |
| Reverse Recovery Charge | Qrr | 45 | nC | |||
| Reverse Recovery Charge | Qrr | 62 | nC | |||
SOP-8L Package Dimensions (Millimeters)
| Symbol | Dimensions |
|---|---|
| A | 1.35 - 1.75 |
| A1 | 0.10 - 0.25 |
| A2 | 1.35 - 1.55 |
| b | 0.33 - 0.51 |
| c | 0.17 - 0.25 |
| D | 4.80 - 5.00 |
| e | 1.27 REF. |
| E | 5.80 - 6.20 |
| E1 | 3.80 - 4.00 |
| L | 0.40 - 1.27 |
| 0 - 8 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP6023CP8 | SOP-8L | 4000 |
2504101957_Siliup-SP6023CP8_C22385413.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.