Complementary MOSFET 60V lead free surface mount device Siliup SP6023CP8 for power management circuits

Key Attributes
Model Number: SP6023CP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A;10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V;30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
106pF;120pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.64nF;2.417nF
Output Capacitance(Coss):
120pF;179pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
42nC@4.5V;46.5nC@10V
Mfr. Part #:
SP6023CP8
Package:
SOP-8L
Product Description

Product Overview

The SP6023CP8 is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with distinct N-channel and P-channel characteristics for versatile circuit designs.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: Complementary MOSFET
  • Lead Status: Lead free product is acquired
  • Package Type: SOP-8L
  • Marking: 6023C (Device Code)

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Unit
Drain-Source Voltage VDS - 60 - -60 V
VGS=0V , ID=250uA - VGS=0V , ID=-250uA - V
Gate-Source Voltage VGS 20 V
20 V
Continuous Drain Current ID - 7 - -10 A
- - - - A
Pulsed Drain Current IDM - 28 - -40 A
- - - - A
Single Pulse Avalanche Energy EAS VDD=20V,VGS=10V,L=0.5mH,RG=25 18 VDD=-20V,VGS=-10V,L=0.5mH,RG=25 36 mJ
- - - - mJ
Power Dissipation PD 2.5 W
Thermal Resistance Junction-to-Ambient RJA 50 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 VGS=0V , ID=-250uA -60 V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - VDS=-48V , VGS=0V , TJ=25 - uA
Gate-Source Leakage Current IGSS 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 to 2.5 VGS=VDS , ID =-250uA -1.0 to -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=2A 23 to 29 m VGS=-10V , ID=-2A 30 to 38 m m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=1A 30 to 40 m VGS=-4.5V , ID=-1A 35 to 47 m m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 1640 VDS=-30V , VGS=0V , f=1MHz 2417 pF
Output Capacitance Coss 120 pF
Reverse Transfer Capacitance Crss 106 pF
Total Gate Charge Qg VDS=48V , VGS=4.5V , ID=10A 42 VDS=-30V , VGS=-10V , ID=-6A 46.5 nC
Gate-Source Charge Qgs 8 nC
Gate-Drain Charge Qg d 11.5 nC
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=10A 9 VDD=-30V VGS=-10V , RG=3, ID=-5A 9.8 nS
Rise Time Tr 10.5 nS
Turn-Off Delay Time Td(off) 36 nS
Fall Time Tf 5 nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS 7 A
Maximum Body-Diode Continuous Current IS -10 A
Reverse Recovery Time Trr IS=7A, di/dt=100A/us, TJ=25 35 IS=-9A, di/dt=-100A/us, Tj=25 30 nS
Reverse Recovery Charge Qrr 45 nC
Reverse Recovery Charge Qrr 62 nC

SOP-8L Package Dimensions (Millimeters)

Symbol Dimensions
A 1.35 - 1.75
A1 0.10 - 0.25
A2 1.35 - 1.55
b 0.33 - 0.51
c 0.17 - 0.25
D 4.80 - 5.00
e 1.27 REF.
E 5.80 - 6.20
E1 3.80 - 4.00
L 0.40 - 1.27
0 - 8

Order Information

Device Package Unit/Tape
SP6023CP8 SOP-8L 4000

2504101957_Siliup-SP6023CP8_C22385413.pdf

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