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quality Power MOSFET 100V N Channel Siliup SP010N07AGTQ with Fast Switching Low Gate Charge and TO220 Package factory
quality Power MOSFET 100V N Channel Siliup SP010N07AGTQ with Fast Switching Low Gate Charge and TO220 Package factory

Power MOSFET 100V N Channel Siliup SP010N07AGTQ with Fast Switching Low Gate Charge and TO220 Package

Key Attributes
Model Number: SP010N07AGTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
RDS(on):
6.7mΩ@10V;8.7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
388pF
Input Capacitance(Ciss):
1.942nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SP010N07AGTQ
Package:
TO-220-3L
Product Description

Product Overview

The SP010N07AGTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. It comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N07AGTQ
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-220-3L-C(1:G 2:D 3:S)
  • Marking: 010N07AG

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS - - - - 100 V
RDS(on) - 10V - 6.7 - m
RDS(on) - 4.5V - 8.7 - m
ID - - - - 90 A
Absolute Maximum Ratings
Drain-Source Voltage VDS - - - 100 V
Gate-Source Voltage VGS - - 20 - V
Continuous Drain Current (Tc=25) ID - - - 90 A
Continuous Drain Current (Tc=100) ID - - - 60 A
Pulsed Drain Current IDM - - - 360 A
Single Pulse Avalanche Energy EAS VDD=50V,VGS=10V,L=0.5mH,RG=25 - - 272 mJ
Power Dissipation (Tc=25) PD - - - 130 W
Thermal Resistance Junction-to-Case RJC - - - 0.96 /W
Storage Temperature Range TSTG - -55 - 150
Operating Junction Temperature Range TJ - -55 - 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.7 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 30A - 6.7 8.5 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 25A - 8.7 12 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1942 - pF
Output Capacitance Coss - - 388 - pF
Reverse Transfer Capacitance Crss - - 12 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 67 - nC
Gate-Source Charge Qgs - - 12 - nC
Gate-Drain Charge Qgd - - 21 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 50V, VDS =50V, ID=50A RG = 4.7 - 12 - nS
Rise Time tr - - 11 - nS
Turn-Off Delay Time td(off) - - 42 - nS
Fall Time tf - - 6 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 90 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 59 - nS
Reverse Recovery Charge Qrr - - 88 - nC

2504101957_Siliup-SP010N07AGTQ_C22466794.pdf
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